Chalcophosphates are ternary (A/P/Q) and quaternary (A/M/ P/Q) compounds with [P y Q z ] nÀ anions in their structure, where M is a metal, A is an alkali metal, and Q is sulfur, [1] selenium, [2] or tellurium. [3] They can exhibit fundamentally and technologically important nonlinear optical [4] and ferroelectric properties, [5] reversible redox chemistry relevant to secondary batteries, [6] photoluminescence, [7] and phasechange properties.[8] However, no metallic selenophosphates have been reported to date. This lack is in striking contrast to the oxophosphate counterparts, which are a well-defined series of unusual metals, such as (PO 2 ) 4 (WO 3 ) 2m , A x (PO 2 ) 4 -(WO 3 ) 2m (A = Na, K), and A x (P 2 O 4 ) 2 (WO 3 ) 2m (A = K, Rb, Tl, Ba).[9] The metallic properties of these phosphates derive from mixed valency of the transition metals. There have been attempts to explore chalcophosphate compounds as thermoelectric materials. For example, in light of the known alkali chalcophosphate compounds, the Tl + analogues Tl 3 Ti 2 P 5 S 18 , Tl 2 CeP 2 S 7 , TlTiPS 5 , and Tl 2 BiP 2 S 7 were investigated.[10] However, they were wide-gap semiconductors and too resistive for such applications. Inclusion of a transition metal gave a better-conducting semiconductor Ni 3 Cr 2 P 2 Q 9 (Q = S, Se).[11]Herein, we report on Rb 4 Sn 5 P 4 Se 20 , the first metallic selenophosphate. Its structure belongs to a class not previously known for this family, namely, a lamellar hybrid of "conducting" with the metallic characteristics. The results of ab initio density functional theory (DFT) calculations using the allelectron full-potential linearized augmented plane wave (FLAPW) method [12] reveal that the metallic behavior originates from the overlap of conduction and valence bands and not any formal mixed valency.Rb 4 Sn 5 P 4 Se 20 was synthesized by the reaction of Sn/Rb 2 Se/ P 2 Se 5 /Se in a 1:1:1:5 molar ratio at 490 8C for four days. However, the complicated Lewis acid-base equilibria in the flux also yielded Rb 3 Sn(PSe 5 )(P 2 Se 6 ) [13] as by-product. On the other hand, the direct combination of the elements and reaction at 515 8C gave SnP 2 Se 6 . [14] We could obtain pure Rb 4 Sn 5 P 4 Se 20 only by direct combination reactions of Sn/ Rb 2 Se/P/Se at 850 8C. According to differential thermal analysis (DTA), Rb 4 Sn 5 P 4 Se 20 melts congruently at 517 8C, and the melt crystallizes at 494 8C. The X-ray powder diffraction patterns before and after melting and recrystallization were identical (Supporting Information Figure S1).Rb 4 Sn 5 P 4 Se 20 crystallizes in the trigonal space group P3 m1.[15] The structure features thick anionic [Sn 5 P 4 Se 20 ] n 4nÀ layers ( Figure 1 and Figure S2 in the Supporting Information). The layer is based on the SnSe 2 structure (CdI 2 type); the latter consists of planes of hexagonally packed Se atoms interleaved with planes of octahedral Sn atoms.[16] The removal of 1