High temperature dielectric properties of (B_xN_yO_z) thin films deposited using ion source assisted physical vapor deposition

Abstract

The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, B x N y O z dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using B x N y O z as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

Boron Nitride from Ammonia Borane and Alkali Amidoboranes and Its Features for Carbon Dioxide Capture

“…[47,48] The second peak is assigned to B x N y O z , which indicates that an oxygen atom has substituted a nitrogen atom in the BN structure. [49,50] The binding energy of the peak depends on the atoms bonded to the boron atom (i.e., NBO 2 or N 2 BO). [51,52] It is still unclear if the oxygen comes from an oxidation of the sample when it briefly enters in contact with air before the pyrolysis, from an oxygen pollution of the N 2 stream in the furnace, or before the XPS analysis due to the handling of the samples under air.…”