2014 IEEE Workshop on Wide Bandgap Power Devices and Applications 2014
DOI: 10.1109/wipda.2014.6964620
|View full text |Cite
|
Sign up to set email alerts
|

High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications

Abstract: This paper presents the testing results of an allsilicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The hightemperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
4
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 18 publications
(4 citation statements)
references
References 11 publications
0
4
0
Order By: Relevance
“…With a similar approach, Arkansas Power Electronics International (APEI) introduced another gate driver integrated SiC power module designed for a bridgeless-boost converter used as a battery charger for electrified vehicles [86]. Fig.…”
Section: A System Integrationmentioning
confidence: 99%
See 1 more Smart Citation
“…With a similar approach, Arkansas Power Electronics International (APEI) introduced another gate driver integrated SiC power module designed for a bridgeless-boost converter used as a battery charger for electrified vehicles [86]. Fig.…”
Section: A System Integrationmentioning
confidence: 99%
“…18. DBC based gate driver integrated modules [82], [86]. In [87], the gate driver ICs, the current sensors, and the ceramic capacitors are co-packaged on a planar structure.…”
Section: A System Integrationmentioning
confidence: 99%
“…The first award was presented in 2009 for NCREPT's work on a high-temperature silicon carbide (SiC) Power Module [4]. In 2014, NCREPT received the award for a high-performance silicon carbide-based plug-in hybrid electric vehicle battery charger [5]. In 2016, NCREPT won its third R&D 100 award for its wide bandgap automotive traction inverter [6].…”
Section: Introductionmentioning
confidence: 99%
“…Some in particular (e.g. [6][7][8][9][10][11][12][13]) implement the power stage with specific 3D power packages, but do not integrate mixed analog and digital circuits, as required for closed-loop readback mechanisms in this work.…”
Section: Introductionmentioning
confidence: 99%