High temperature simulation of 6H- and 4H-silicon carbide MOSFETs

Shams, S.F.; Sundaram, Kalpathy B.; Chow, Lee

doi:10.1109/secon.1998.673347

Proceedings IEEE Southeastcon '98 'Engineering for a New Era'

DOI: 10.1109/secon.1998.673347

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High temperature simulation of 6H- and 4H-silicon carbide MOSFETs

S.F. Shams

Kalpathy B. Sundaram²,

Lee Chow³

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High temperature simulation of 6H- and 4H-silicon carbide MOSFETs

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