High temperature study of FT-IR and Raman scattering spectra of vacuum deposited CuPc thin films

Szybowicz, Mirosław; Runka, Tomasz; Drozdowski, M.; Bała, W.; Grodzicki, A.; Piszczek, Piotr; Bratkowski, A.

doi:10.1016/j.molstruc.2004.01.053

Cited by 66 publications

(59 citation statements)

References 21 publications

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“…The heating process changes the polymorphic form and physical properties of the investigated material. The obtained results for ZnPc thin layers deposited on silicon and glass substrates have been already reported in our previous article [22].…”

Section: Introductionsupporting

confidence: 75%

“…The vibrations of the FePc planar molecules which consist of 57 atoms and possessing D 4h point group symmetry has been described in our previous article for CuPc, MgPc, and ZnPc can be classified into following irreducible representation (taking into account only internal vibrations) [22][23][24]:…”

Section: Resultsmentioning

confidence: 99%

“…In this configuration, the molecular z 0 -axis does not coincides with the normal to the surface (z-axis). Detailed information concerning the designation of the orientation of the metallophthalocyanine thin layers using polarized Raman spectra have been already reported in our previous articles [22,24]. The molecular orientation of FePc thin films was examined for two thicknesses of the thin layers equal to 79 and 230 nm.…”

Section: Resultsmentioning

confidence: 99%

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Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force microscopy and micro-Raman spectroscopy

Szybowicz

Makowiecki

2011

J Mater Sci

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In this article, we present temperature and orientation study of iron phthalocyanine (FePc) thin films with different thickness deposited on silicon substrate. The organic thin films were obtained by the quasi-molecular beam evaporation. The micro-Raman scattering spectra of FePc thin layers were investigated in the spectral range 550-1,800 cm -1 using 488-nm excitation wavelength. The Raman scattering and atomic force microscopy studies were performed at room temperature before and after annealing process. Annealing process of thin layers was carried out at 453 K for 6 h. From polarized Raman spectra using surface Raman mapping procedure the information on distribution of polymorphic phases of FePc layers has been carried out. Moreover, the obtained results showed the influence of the annealing process on the ordering of the molecular structure of thin films deposited on silicon substrate. For the very thin layers we did not observe the change of the polymorphic phase but only reordering of the thin layers and change of molecular structure to intermediate phase. Using atomic force microscopy method, we observed arrangement of the thin layers structure connected with the change of roughness of the thin layers after annealing process. The obtained results indicate that the structure of thin layer deposited on silicon substrate is strongly affected by the annealing process.

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Section: Introductionsupporting

confidence: 75%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force microscopy and micro-Raman spectroscopy

Szybowicz

Makowiecki

2011

J Mater Sci

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“…The b angle is calculated from the ratio intensities (I VV /I VH ) for A 1g and B 1g Raman modes of MPcs deposited on solid state substrate. Detailed informations concerning the designation of the orientation of the MPc thin layers using polarized Raman spectra we concluded in the previous works [21,22]. The orientation of MPc's thin layers is closely connected with parameters of the deposition process such as: temperature of the substrate, deposition rate, method of evaporation, and thickness of the obtained thin layers.…”

Section: Resultsmentioning

confidence: 83%

The molecular structure ordering and orientation of the metallophthalocyanine CoPc, ZnPc, CuPc, and MgPc thin layers deposited on silicon substrate, as studied by micro-Raman spectroscopy

et al. 2011

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In this article, we present orientation study of metallophthalocyanine (MPcs) (CoPc, ZnPc, CuPc, and MgPc) thin films deposited on silicon substrate. The MPc's thin layers were obtained by the quasi-molecular beam evaporation. The micro-Raman scattering spectra of MPc's thin films were investigated in the spectral range 550-1650 cm -1 using 488 nm excitation wavelength. Raman scattering studies were performed at room temperature before and after annealing process. Annealing process of thin layers was carried out at 200°C for 6 h. From polarized Raman spectra using surface Raman mapping, the information on polymorphic phase of MPc's layers has been obtained. The chosen Raman modes A 1g and B 1g are connected with different polymorphic phases of MPc (a and b form) thin layers. Moreover, the obtained results showed the influence of the annealing process on the ordering of the molecular structure. Following the annealing process, it was observed arrangement of the thin layers structure being revealed in Raman spectra. The obtained results indicate that the annealing process has a significant influence on the structure of thin layers being under study.

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“…The vibration of CuPc molecule consisting of 57 atoms and possessing D 4h point group symmetry can be classified into the following irreducible representation [9,14]:…”

Section: Resultsmentioning

confidence: 99%

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Skonieczny

Popielarski

Bała

et al. 2016

Materials Science-Poland

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The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm −1 to 1900 cm −1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

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High temperature study of FT-IR and Raman scattering spectra of vacuum deposited CuPc thin films

Cited by 66 publications

References 21 publications

Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force microscopy and micro-Raman spectroscopy

Orientation study of iron phthalocyanine (FePc) thin films deposited on silicon substrate investigated by atomic force microscopy and micro-Raman spectroscopy

The molecular structure ordering and orientation of the metallophthalocyanine CoPc, ZnPc, CuPc, and MgPc thin layers deposited on silicon substrate, as studied by micro-Raman spectroscopy

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

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