High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage

Lai, Da-Wei; Raad, Gijs de; Sque, S. J.; Peters, W.C.M.; Smedes, T.

doi:10.1109/ted.2019.2917264

Cited by 12 publications

(2 citation statements)

References 11 publications

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“…In the field of power electronics, the degradation or failure induced by electrostatic discharge (ESD) event has attracted more and more attention [1][2][3][4][5][6][7]. It is because, the ESD-induced instantaneous high voltage will damage electronic components' sensitive structures and their internal connections, which accounts for more than 60% of the events causing the failure of electronic components.…”

Section: Introductionmentioning

confidence: 99%

Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

Shi

Huang

et al. 2022

IEEE J. Electron Devices Soc.

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This work carried out the experimental investigation and model analysis on a GaN electrostatic discharge (ESD) clamp, which features a discharge high electron mobility transistor (HEMT) and a voltage divider formed by a lateral field effect rectifier (L-FER) chain and a resistor in series. Firstly, it is found through the experimental investigation, the turn-on voltage (VT) of GaN ESD clamp's static current is increased with the increase in L-FER's number and the decrease in resistor's value. Then, an analytical model is proposed to analyze the dependence of VT on L-FER's number and resistor's value. And the analytical model exhibits a good consistency with the experimentally measured results, which confirms the validity of the presented analytical model. Lastly, the dependence of GaN ESD clamp's transmission line pulsing characteristics on the L-FER's number and resistor's value is also analyzed. Similarly, GaN ESD clamp's triggering voltage is also increased with the increase in L-FER's number and the decrease in resistor's value. The experimental investigation and model analysis of this work can be used to direct the design of GaN ESD clamp, and help to save a lot of manpower, material resources and time costs.

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Section: Introductionmentioning

confidence: 99%

Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

Shi

Huang

et al. 2022

IEEE J. Electron Devices Soc.

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“…Even a small defect during manufacturing can cause considerable losses to the manufacturer. Electrostatic discharge (ESD) events [1][2][3][4][5][6][7][8][9][10] for integrated circuits (ICs) are the major hazard to reliability.…”

Section: Introductionmentioning

confidence: 99%

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Hong

Chen

2021

Electronics

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Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. By using a transmission-line pulse tester, the trigger voltage, holding voltage, and secondary breakdown current (It2) of the nLDMOS element were determined using the I–V characteristic. As the N+ area was gradually replaced by the parasitic Schottky area at the drain electrode, an equivalent circuit of series Schottky diodes formed, which increased the on-resistance. The larger the Schottky area was the higher the It2 value was. This characteristic can considerably improve the ESD immunity of nLDMOS components (highest improvement of 104%). This is a good strategy for improving ESD reliability without increasing the production steps and fabrication cost.

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Application and Prospect of Human-Machine Interaction in Power System

Yunfeng¹,

Mingming

2019

J. Phys.: Conf. Ser.

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Poser system provide many scenarios the innovation of human-machine interaction technology. Four advanced human-machine interaction technologies in power system are introduced and the necessity of human-machine interaction in power system are summarized from four aspects. Development Course of Human-Machine Interaction in Power System are divided into five generations based on technical characteristics. Four technological trends which should be focused on are given.

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High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage

Cited by 12 publications

References 11 publications

Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

Experimental Investigation and Model Analysis on a GaN Electrostatic Discharge Clamp

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Application and Prospect of Human-Machine Interaction in Power System

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