High voltage SOI stacked switch with varying periphery FETs

Zhu, Yu; Klimashov, Oleksiy; Roy, Ambarish; Blin, Guillaume; Whitefield, D.; Bartle, D.

doi:10.1109/apmc.2015.7413448

Cited by 9 publications

(7 citation statements)

References 6 publications

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“…We use the formulas used by Zhu et al . [5] to evaluate the impact of the reduction of substrate coupling on the breakdown. In order to assess the accuracy of the breakdown voltage model, we plotted in Fig.…”

Section: Measurement Setup and Resultsmentioning

confidence: 99%

“…This reduction improves the small-signal behavior reflected in flat insertion loss: below 0.4 dB from DC to 30 GHz. Based on the equations in [5] and our RF-SOI switch data, it should also improve the RF breakdown of this SPST switch.…”

Section: Discussionmentioning

confidence: 99%

“…By removing the substrate and putting the GaN coupon on RF-SOI the vertical isolation is significantly reduced as demonstrated in part III. As a consequence, the HEMT RF breakdown voltage should be improved [5].…”

Section: Innovative Heterogeneous 3d Gan/rf-soi Technologymentioning

confidence: 99%

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RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

Drillet

Loraine

Saleh

et al. 2021

Int. J. Microw. Wireless Technol.

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This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

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Section: Measurement Setup and Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

Drillet

Loraine

Saleh

et al. 2021

Int. J. Microw. Wireless Technol.

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“…where V th is the threshold FET voltage. As presented in [27] the maximum breakdown voltage is determined by:…”

Section: Rf Fem Soi Switches For 5gmentioning

confidence: 99%

Circuits for 5G RF front-end modules

Balteanu

2023

Int. J. Microw. Wireless Technol.

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Worldwide adoption of fourth-generation wireless (4G) long-term evolution (LTE) smartphones and the actual transition to fifth-generation wireless(5G) is the main driving engine for semiconductor industry. 5G is expected to reach high data rate speeds (1 Gbps) and low latency (<1 ms). 5G requires more RF bandwidth and therefore an increase in the number of components such as RF switches, acoustic filters, and power amplifiers integrated in few RF front-end modules. Also, there is an increase in the number of RF radio transmitters and receivers operating at the same time. This paper presents new architecture elements for 5G RF front-end modules. Circuit details and measurements are presented to reduce the RF noise, improve the efficiency, and help the coexistence of multiple radio transmitters. These circuits will help extend the 5G applications with radar-like sensing applications, remote medicine, and autonomous driving.

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“…Stacking FETs is the most straightforward approach to overcome this issue (Devlin, 1999). (Zhu et al, 2015) states that the total voltage across the stack is distributed equally between the individual members of the stack. Therefore, the breakdown voltage of the stack can be calculated using equation (3.1) below.…”

Section: Stacking Fetsmentioning

confidence: 99%

Millimeter-wave Antenna Selection Switch using Advanced CMOS Technologies

Tan¹,

Constantin²

2021

2021 International Symposium on Electrical and Electronics Engineering (ISEE)

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I would like to express my sincere thanks to Professor Nicolas Constantin, who gave me the opportunity to study in Canada. Thank you for your dedicated instructions and your enthusiastic support that helped me to have more motivation to complete my thesis.I also want to take this opportunity to thank my labmates at LACIME for all their support and discussions. Especially, I would like to thank Smarjeet for all the good things you taught me from the first day of my study.I would also like to thank Sanjeev for his help during my time at Skyworks Solutions, Inc. Ottawa.Mom, Dad! I am always thankful to you for your unconditional love and support. Finally, I appreciate Skyworks Solutions, Inc. for giving me the opportunity to conduct research and collaborate through the Natural Sciences and Engineering Research Council of Canada (NSERC) Collaborative Research and Development (CRD) Grant. Millimeter-wave antenna selection switch using advanced cmos technologies Hoai Tan PHAM RÉSUMÉ L'objectif principal de ce travail de recherche est de développer un circuit de commutation d'antenne innovant sur circuit intégré (CI) CMOS pour les équipements de communication mobile de cinquième génération (5G).Les objectifs spécifiques sont d'étudier, de concevoir, de simuler, de tester et de valider le fonctionnement du circuit de commutation d'antenne CMOS proposé fonctionnant à 28 GHz. Le circuit de commutation comprend un circuit de commutation SPDT (Single Pole Double Throw) sur une seule puce en technologie CMOS, ainsi que les lignes de transmission nécessaires intégrées dans un stratifié multicouche pour la connexion entre le circuit de commutation sur puce et les deux antennes.La nécessité de la coexistence des technologies RF et ondes millimétriques (par exemple, les émetteurs-récepteurs WLAN dans la bande 5 GHz et les émetteurs-récepteurs de communication machine à machine dans la bande 28 GHz) dans les futurs équipements de communication sans fil impose des défis de conception et d'intégration dans le module Amplificateur de puissance (PA) destiné aux émetteurs frontaux.Un aspect clé est la nécessité d'inclure des fonctions de commutation d'antenne à ondes millimétriques dans le même module PA tout en favorisant la miniaturisation. Cela nécessite une innovation dans la conception et l'intégration de circuits de commutation CMOS à faible perte sur le même CI PA 28 GHz. Cela complique également la conception de la partie frontale de l'émetteur, car elle nécessite des connexions à faible perte à partir du circuit intégré de l'amplificateur de puissance vers différents emplacements d'antenne RF et à ondes millimétriques sur le circuit imprimé (PCB) de l'équipement de communication.Le point de départ est l'étude de la documentation de conception sur une structure de base d'un commutateur d'antenne à ondes millimétriques conçu chez Skyworks Solutions, Inc. Une étude approfondie accompagne cette recherche, à travers des simulations d'architectures et de circuits de commutation de pointe, une revue des techniques proposées dans la l...

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High voltage SOI stacked switch with varying periphery FETs

Cited by 9 publications

References 6 publications

RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

RF Small and large signal characterization of a 3D integrated GaN/RF-SOI SPST switch

Circuits for 5G RF front-end modules

Millimeter-wave Antenna Selection Switch using Advanced CMOS Technologies

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