High-κ Dielectric Stacks for Nanoscaled SOI Devices

Hall, Steve; Buiu, O.; Mitrović, Ivona Z.; Lu, Yi; Davey, W.

doi:10.1007/978-1-4020-6380-0_3

Cited by 8 publications

(16 citation statements)

References 66 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This indicates that at the level of 1×10 13 /cm 2 /eV, the subgap states are dominated by internal contributions rather than interface states that are known to exist in oxides. This is consistent given that oxide charge traps are typically on the order of 10 11 -10 12 /cm 2 , 36,43,44 which is too small to account for the ρ(E) observed here. It should also be emphasized that scenarios explored here pertain to the range of E F not too close to the band edge.…”

Section: (B)supporting

confidence: 87%

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Wang

Rhodes

Feng

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe2 field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 1013/cm2/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

show abstract

Section: (B)supporting

confidence: 87%

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Wang

Rhodes

Feng

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Under these conditions, one may expect that HfO 2 film is formed at a temperature above 530 8C, and will be free from carbon and any organic fragments. The proposed scheme of Hf(dpm) 4 vapor decomposition differs from that for thermolysis of Al(acac) 3 vapors. [12] According to this scheme, under the same conditions (at T > 520 8C), one should expect that high carbon content in the condensed phase arises as a result, not only of destruction of the chelate vapor, but also as a result of the fragmentary decomposition of the ligand, which leads to a broad set of gaseous products;…”

Section: Resultsmentioning

confidence: 95%

“…In view of the examined mechanisms of thermal decomposition of Hf(dpm) 4 and Al(acac) 3 vapors, one may assume that Al(acac) 3 will be the source of carbon-containing impurities in the (HfO 2 ) x (Al 2 O 3 ) 1-x films.…”

Section: Resultsmentioning

confidence: 99%

“…Hf(dpm) 4 and Al(acac) 3 as the precursors. The investigation was also aimed at studying the thermal decomposition of Hf(dpm) 4 vapor, determination of the major gaseous products of destruction and detailed characterization of the structure, chemical composition, optical and electrophysical properties of the obtained layers and structures.…”

Section: Full Papermentioning

confidence: 99%

“…The films were grown by CVD using a mixture of Al(acac) 3 and Hf(dpm) 4 as a single-source precursor. Growth conditions of the films under study are shown in Table 1.…”

Section: Film Growthmentioning

confidence: 99%

See 2 more Smart Citations

MOCVD and Physicochemical Characterization of (HfO₂)_x(Al₂O₃)_1‐x Thin Films

Smirnova

Lebedev

Морозова

et al. 2010

Chemical Vapor Deposition

View full text Add to dashboard Cite

Investigation of the thermal behavior of Hf(dpm) 4 vapor in vacuum is carried out. An approach for obtaining films of (HfO) x (Al 2 O 3 ) 1-x alloys is developed. The use of a source containing a mixture of two precursors differing from each other in volatility, notably Hf(dpm) 4 (dpm ¼ dipivaloylmethanate, 2,2,6,6-tetramethylheptane-3,5-dionate) and Al(acac) 3 (acac ¼ pentane-2,4-dionate), allows us to employ the possibilities of combinatorial chemistry, and to obtain and analyze a number of different compositions of alloys. Film characterization is performed using a set of analytical methods. The character of Al and Hf distributions across the film thickness, depending on their content in the source, is investigated. The use of laser null ellipsometry allows us to determine the distribution of the refractive index across the thickness of the (HfO) x (Al 2 O 3 ) 1-x film. A comparison of the ellipsometric data with the X-ray photoelectron spectroscopy (XPS) data shows that the character of the refractive index variation reproduces the variation of the chemical composition across the film thickness. A uniform distribution of the elements across the film thickness is observed in the cases when separated sources are used. The structure of the film depends on the molar fraction of Al 2 O 3 in alloys. For Al ! 30 at.-% amorphization of the structure occurs.

show abstract

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications

Zhang

Aslam

Reiners

et al. 2014

Chemical Vapor Deposition

View full text Add to dashboard Cite

The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post‐annealing step. Stoichiometric Al2O3 and oxygen‐deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis‐dimethlyamido‐titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as‐grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen‐deficient TiOx shows semiconducting behavior. The bipolar‐type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.

show abstract

High-κ Dielectric Stacks for Nanoscaled SOI Devices

Cited by 8 publications

References 66 publications

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

MOCVD and Physicochemical Characterization of (HfO₂)_x(Al₂O₃)_1‐x Thin Films

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications

Contact Info

Product

Resources

About

High-κ Dielectric Stacks for Nanoscaled SOI Devices

Cited by 8 publications

References 66 publications

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

MOCVD and Physicochemical Characterization of (HfO2)x(Al2O3)1‐x Thin Films

Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications

Contact Info

Product

Resources

About

MOCVD and Physicochemical Characterization of (HfO₂)_x(Al₂O₃)_1‐x Thin Films

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications