Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

Abstract

Combustion synthesis is a well-known method for synthesis of transparent metal oxide thin films at low temperature (< 400 oC). However, their functional properties are often inferior due to high...

Elucidating the Epitaxial Growth Mechanisms of Solution-Derived BiVO4 Thin Films Utilizing Rapid Thermal Annealing

“…We demonstrate that these heteroepitaxial ms-BiVO 4 domains, situated at the interface with the YSZ substrate, are pivotal for the subsequent solid-state epitaxial transformation. It is worth noting that the combustion reaction of acetylacetone generates gaseous byproducts, such as CO 2 , N 2 , and NO 2 , and thus pyrolysis on thicker deposited layers may give rise to porous microstructures . To grow compact BiVO 4 thin films, it is advised to control the thickness of a single spin-coated layer to the 5–15 nm range by varying the concentration and viscosity of the precursor solution as well as the spinning speed.…”

“…It is worth noting that the combustion reaction of acetylacetone generates gaseous byproducts, such as CO 2 , N 2 , and NO 2 , and thus pyrolysis on thicker deposited layers may give rise to porous microstructures. 34 To grow compact BiVO 4 thin films, it is advised to control the thickness of a single spin-coated layer to the 5−15 nm range by varying the concentration and viscosity of the precursor solution as well as the spinning speed. Each spin-coated layer must be pyrolyzed separately; then, additional layers can be repeatedly deposited to achieve the desired film thickness.…”

Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet Photodetectors

“…Unlike other MOS‐fabricating methods such as pulsed laser deposition, radio frequency sputtering, atomic layer deposition, and etc., the efficient CS method can enable low‐temperature annealing in ambient air with desired morphology of MOS and especially InZnO thin films. [ 34–37 ] However, despite advantages of the CS technique, it has been rarely applied to obtain MOS nanowires, [ 38,39 ] and particularly InZnO nanowires have not been made by CS technique in literature. Also importantly, after MOS nanowires being prepared by CS, the electrospinning technique can be applied to efficiently construct desired devices.…”

“…Unlike other MOS-fabricating methods such as pulsed laser deposition, radio frequency sputtering, atomic layer deposition, and etc., the efficient CS method can enable low-temperature annealing in ambient air with desired morphology of MOS and especially InZnO thin films. [34][35][36][37] However, despite advantages of the CS technique, Ultraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary-cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single-cation counterparts.…”