Highly efficient and recyclable Z-scheme heterojunction of Ag3PO4/g-C3N4 floating foam for photocatalytic inactivation of harmful algae under visible light

Ding, Ning; Qian, Fei; Xiao, Dongdong; Zhang, Hui; Yuan, Chunyu; Lv, Huijun; Gao, Peike; Zhang, Yongzheng; Wang, Renjun

doi:10.1016/j.chemosphere.2023.137773

Cited by 17 publications

(1 citation statement)

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“…39 However, g-C 3 N 4 suffers from a limited optical response, a high rate of charge carriers' recombination, and a weak oxidation ability of holes. 31 In recent years, several strategies have been developed to overcome the g-C 3 N 4 shortages in photocatalytic reactions, such as defect engineering, [40][41][42] doping of metallic or nonmetallic elements, 43,44 foam synthesis, 45 exfoliation, 46 and formation of heterostructures. [47][48][49][50] Among them, the formation of type II heterostructures of g-C 3 N 4 and another semiconductor is a potent method to suppress the charge carriers' recombination and increase photocatalytic efficiency.…”

Section: G-c 3 N 4 -Based S-scheme Heterojunctionsmentioning

confidence: 99%

Principles, mechanism, and identification of S‐scheme heterojunction for photocatalysis: A critical review

Molaei

2024

J Am Ceram Soc.

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Semiconductor photocatalysis has been extensively used in the degradation of pollutants and the production of hydrogen fuel. The main drawback in the application of semiconductor photocatalysis is the rapid recombination of charge carriers. Several strategies have been applied to improve charge carrier separation to preserve them for imparting in photocatalytic reactions. Among the modifications that are made in the photocatalytic systems, the construction of different types of heterostructures, including type II, Z‐scheme, p–n junction, and Schottky junction, has received great attention. Recently, emerging S‐scheme heterojunctions have been shown to be able to preserve powerful charge carriers for photocatalytic reactions, which is not the case in other heterostructures. In this review, principles and mechanisms of charge transfer in S‐scheme heterostructures are discussed, and important semiconductors that have been used in the construction of this type of heterojunctions are reviewed. Methods for identification of S‐scheme heterojunction, challenges, and prospects have been addressed.

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