Highly efficient SWCNT/GaAs van der Waals heterojunction solar cells enhanced by Nafion doping

Chen, Yue; Shi, Xun; Zhou, Dayong; Hao, Wei; Yang, Guiting; Zhang, Luoxi; Zhu, Mingkui; Yin, Huan; Sun, L. Z.; Su, Yanjie

doi:10.1016/j.jallcom.2022.167624

Cited by 7 publications

(1 citation statement)

References 49 publications

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“…Many attempts have been made for more than two decades to deactivate the high surface density of states using several elements and compounds. Presently surface passivation topic is quite active in GaAs-related solar cells [15,[33][34][35][36][37], but without any discovery of a permanent solution to the active surface problem [2,38]. Sulfur (S) passivation has been the most promising surface treatment, significantly improving surface electrical properties and drawing considerable attention [39][40][41][42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Tyagi

2023

Mater. Res. Express

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GaAs is well known for its extremely high electron mobility and direct band gap. Owing to the technological advances in silicon-based technology, GaAs has been limited to niche areas. This paper discusses the application of GaAs in molecular electronics and spintronics as a potential field for considering this amazing but challenging material. GaAs is challenging because its surface is characterized by a high density of surface states, which precludes the utilization of this semiconducting material in mainstream devices. Sulfur(S)-based passivation has been found to be significantly useful for reducing the effect of dangling bonds and was researched thoroughly. GaAs applications in molecular spintronics and electronics can benefit significantly from prior knowledge of GaAs and S interactions because S is a popular functional group for bonding molecular device elements with different semiconductors and metals. In this article, the problem associated with the GaAs surface is discussed in a tutorial form. A wide variety of surface passivation methods has been briefly introduced. We attempted to highlight the significant differences in the S-GaAs interactions for different S passivation methods. We also elaborate on the mechanisms and atomic-scale understanding of the variation in surface chemistry and reconstruction due to various S passivation methods. It is envisioned that GaAs and thiol-terminated molecule-based novel devices can exhibit novel device characteristics and bring the added advantage of S-based passivation.

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Section: Introductionmentioning

confidence: 99%

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Tyagi

2023

Mater. Res. Express

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Predicting model of I–V characteristics of quantum-confined GaAs nanotube: a machine learning and DFT-based combined framework

Roy¹,

2023

J Comput Electron

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Enhancing thermoelectric performance of single-walled carbon nanotube films by poly(styrene sulfonate acid) dispersing and sequential base treatment

Tang,

Yang,

et al. 2024

Composites Communications

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Highly efficient SWCNT/GaAs van der Waals heterojunction solar cells enhanced by Nafion doping

Cited by 7 publications

References 49 publications

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Predicting model of I–V characteristics of quantum-confined GaAs nanotube: a machine learning and DFT-based combined framework

Enhancing thermoelectric performance of single-walled carbon nanotube films by poly(styrene sulfonate acid) dispersing and sequential base treatment

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