Highly Reliable Charge Trap‐Type Organic Non‐Volatile Memory Device Using Advanced Band‐Engineered Organic‐Inorganic Hybrid Dielectric Stacks

Abstract

With the recent interest in data storage in flexible electronics, highly reliable charge trap-type organic-based non-volatile memory (CT-ONVM) has attracted much attention. CT-ONVM should have a wide memory window, good endurance, and long-term retention characteristics, as well as mechanical flexibility. This paper proposed CT-ONVM devices consisting of band-engineered organic-inorganic hybrid films synthesized via an initiated chemical vapor deposition process. The synthesized poly(1,3,5-trimethyl-1,3,5,-trivinyl cyclotrisiloxane) and Al hybrid films are used as a tunneling dielectric layer and a blocking dielectric layer, respectively. For the charge trapping layer, different Hf, Zr, and Ti hybrids are examined, and their memory performances are systematically compared. The best combination of hybrid dielectric stacks showed a wide memory window of 6.77 V, good endurance of up to 10 4 cycles, and charge retention of up to 71% after 10 8 s even under the 2% strained condition. The CT-ONVM device using the hybrid dielectric stacks outperforms other organic-based charge trap memory devices and is even comparable in performance to conventional inorganic-based poly-silicon/oxide/nitride/oxide/silicon structures devices. The CT-ONVM using hybrid dielectrics can overcome the inherent low reliability and process complexity limitations of organic electronics and expedite the realization of wearable organic electronics.

Designing Organic and Hybrid Surfaces and Devices with Initiated Chemical Vapor Deposition (iCVD)

“…Directly deposited hybrid layers were achieved with the addition of metalorganic precursors during iCVD growth (Figure 6A). [50,51] In addition to the metalorganic precursor, the vapor phase mixture in the iCVD reactor included the monomer HEMA, the trivinyl crosslinking monomer V3D3, and the TBPO initiator. The hydroxyl (─OH) functional group of HEMA undergoes an oxidation reaction with the metalorganic precursors.…”

The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs)

“…[7,8] In addition, various types of functional electronic devices such as flash memory, integrated circuits, neuromorphic devices and sensors have been successfully demonstrated. [9][10][11][12] In line with the advantageous characteristics of organic semiconductors, polymer dielectric materials have been extensively developed owing to their excellent insulating properties as well as mechanical flexibility. [13,14] Accordingly, various types of polymeric dielectric layers have been investigated to achieve high-performance OTFTs.…”

The future of solution processing toward organic semiconductor devices: a substrate and integration perspective

“…2,3 Although it is still quite challenging for organic semiconductors to outperform traditional semiconductors based on silicon and gallium arsenide in terms of electrical performance, they have advantages such as lower cost of manufacturing, low-temperature processing, flexibility, and disposability. 4 With the continuous expansion and improvement of the functions of OSCs, scientists have examined various small organic molecules and polymers to expand their applications in electronic devices, including organic field-effect transistors (OFETs), 5–7 organic light-emitting diodes (OLEDs), 8–14 organic solar cells, 15–19 organic memories, 20–25 organic sensors, 26–29 and organic lasers. 30–33…”