Highly reliable multilevel resistive switching in a nanoparticulated In₂O₃ thin-film memristive device

Abstract

The present report deals with the development of a cost-effective, solution-processable and nanoparticulated In 2 O 3 thin-film memristive device for application in multilevel resistive random access memory (RRAM). The structural, morphological, elemental and electrical characterizations are carried out with the help of x-ray diffractometry, scanning electron microscopy, photoluminescence spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and a memristor characterization system. The electrical characterizations reveal that the nanoparticulated In 2 O 3 thin-film memristive device is free from the electroforming process and shows self-rectifying and self-compliance memory effects. Furthermore, we have demonstrated multilevel resistive switching with excellent memory properties of endurance (10 000 switching cycles) and retention (2 ks). Interestingly, the device shows a good memory window (10 for all cases), and multilevel resistance states are not degraded during endurance and retention memory tests. The uniformity and stability in multilevel resistive switching are further confirmed by statistical calculations. Furthermore, the nanoparticulated In 2 O 3 thin-film memristive device mimics the property of paired-pulse facilitation of a biological synapse. A detailed analysis of electrical results suggests that the Schottky effect is responsible for the device conduction. In a nutshell, the nanoparticulated In 2 O 3 memristive device is suitable for future multilevel RRAM application and is a promising candidate for development of an electronic synaptic device for application in neuromorphic computing.

Resistive Switching of the Tetraindolyl Derivative in Ultrathin Films: A Potential Candidate for Nonvolatile Memory Applications

“…The switching speed was found to be 100 ns. This type of bipolar switching using organic molecules is very promising for applications such as memory, 38 computing, 39 sensing, 40 and logic circuits. 41 In these bipolar switching devices, the SET (transition from HRS to LRS) operation represents a "writing" operation for memory applications.…”

“…The switching speed was found to be 100 ns. This type of bipolar switching using organic molecules is very promising for applications such as memory, computing, sensing, and logic circuits …”

Advances in resistive switching based memory devices

“…The RS phenomenon has been observed in several materials, including chalcogenides [19], selenides [20], graphene oxide [21], organic polymer composites [22] and transition metal oxides [2,23,24]. Among all these materials, transition metal oxide based RS devices have been studied extensively in the past few years [6,[25][26][27][28]. Several types of mechanisms such as (i) thermochemical memory devices [29], (ii) electrochemical metallization memory (ECM) [30,31], and (iii) valence change memory [31] have been proposed to explain RS in these materials.…”

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

“…A native oxide layer on electrode material could intensify the performance of RRAM with respect to environmental stability, reliability, and R ON /R OFF ratio. Frank et al showed that the thin oxide layer of Al 2 O 3 improved the device’s switching mechanism and reliability [ 22 ]. Zinc oxide (ZnO) has proven its potential capability in RRAM performance due to its large band gap (3.37 eV) and high exciton binding energy (B.E) (60 MeV) at absolute temperature.…”