Highly stabilized hydrogenated amorphous silicon solar cells fabricated by triode-plasma CVD

Two-dimensional modelling and simulation of hydrogenated amorphous silicon p+–n–n+ solar cell

“…A comparison between the simulated results obtained in this study and the experimental results published in literature [31] reveals that for nearly the same absorber layer thickness, the reference cell performs almost similar to that reported in the literature. Recently, using a highly stabilized a- the parentheses are obtained after and before light soaking, respectively [31].…”

Fabrication of the Hydrogenated Amorphous Silicon Films Exhibiting High Stability Against Light Soaking

“…The i-layer was prepared with the triode system at the substrate temperature of 180 o C. The distance between the mesh and the substrate is 1.5 cm. [Sonobe et al, 2006] The initial conversion efficiency is 10.0 %, and after the light soaking, the stabilized efficiency of 9.2 % is achieved. The degradation ratio is 7.8 % which is the lower value compared with that generally observed in the a-Si:H solar cell prepared by a conventional method with the same i-layer thickness.…”

“…The doped layers were prepared in conventional diode system chambers, and the i-layer was fabricated in a triode system chamber at 180 o C. The distance between the mesh and the substrate is 1.5 cm. The other detailed conditions for the solar cell fabrication are described elsewhere [Sonobe et al, 2006]. The I-V characteristics of the solar cells were measured under an illumination of AM 1.5, 100 mW/cm 2 white light.…”

“…The i-layer thickness is 250 nm. The I-V characteristic of the solar cell is shown in figure 9 [ Sonobe et al, 2006]. Fig.…”

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

“…Current interests in hydrogenated amorphous silicon thin films and its alloys as promising candidates for the realization of advanced sensing system such as gas sensors [1,2], pixel detector for high energy particles [3,4], optical imaging [5], active matrix displays [6,7] and solar cells [8][9][10] is clearly seen from these publications. Hydrogenated amorphous silicon thin films have high optical absorption, low temperature deposition (<300°C) is possible, high uniformity over large area, few constraints on substrate size, material, or topology.…”