Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate

Kwon, Hyeokjin; Ye, Heqing; An, Tae Kyu; Hong, Jisu; Park, Jin Young; Choi, Yongseon; Shin, Seongjun; Lee, Jihoon; Kim, Se Hyun; Li, Xinlin

doi:10.1016/j.orgel.2019.105391

Cited by 22 publications

(14 citation statements)

References 46 publications

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“…In the third chamber, the monomer gas was deposited and self-assembled to form the Parylene-C on top of the Si/SiO2/IGZO substrate at 10E-6 mBar vacuum level. The CVD deposition of parylene-c is the best choice for the conformal coatings 37 , insulation and pinhole-free surface 38 .…”

Section: Methodsmentioning

confidence: 99%

“…In the third chamber, the monomer gas was deposited and self-assembled to form the Parylene-C on top of the Si/SiO 2 /IGZO substrate at the 10 × 10 –6 mBar vacuum level. The CVD of Parylene-c is the best choice for the conformal coatings, insulation, and pinhole-free surfaces . In this case, the sample is not exposed to higher temperatures and there is no physical damage to the thin-film.…”

Section: Experimental Sectionmentioning

confidence: 99%

“…The CVD of Parylene-c is the best choice for the conformal coatings, 37 insulation, and pinhole-free surfaces. 38 In this case, the sample is not exposed to higher temperatures and there is no physical damage to the thin-film. Moreover, it allows us to extend to flexible substrates.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Fully Integrated Indium Gallium Zinc Oxide NO₂ Gas Detector

et al. 2020

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We report an amorphous indium gallium zinc oxide (IGZO) based toxic gas detection system. The microsystem contains an IGZO thin film transistor (TFT) as a sensing element and exhibits remarkable selectivity and sensitivity to low concentrations of nitrogen dioxide (NO2). In contrast to existing metal oxide based gas sensors, which are active either at high temperature or with light activation, the developed IGZO TFT sensor is operable at room temperature and requires only visible light activation to revive the sensor after exposure to NO2. Furthermore, we demonstrate air-stable sensors with an experimental limit of detection of 100 ppb. This is the first report on metal oxide TFT gas sensors without heating or continuous light activation. Unlike most existing gas sensing systems that take care of identifying the analytes alone, the developed IGZO microsystem not only quantifies NO2 gas concentration but also yields 5-bit digital output. The compact microsystem incorporating readout and analog to digital conversion modules developed using only two TFTs, paves the way for inexpensive toxic gas monitoring systems.

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Section: Methodsmentioning

confidence: 99%

Section: Experimental Sectionmentioning

confidence: 99%

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Fully Integrated Indium Gallium Zinc Oxide NO₂ Gas Detector

et al. 2020

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“…PPx coatings are widely used as passivation layers. − Due to these properties, PPx is a promising candidate for polymeric gate dielectric layers. However, most previous studies on PPx films as dielectric layers (not passivation layers) have focused on organic semiconductors, and only a limited number of studies on metal oxide semiconductors have been reported. − Additionally, there has been significant progress in the preparation and application of functionalizable PPx coatings over the past two decades. − Conformal and pinhole-free polymeric thin films have been prepared using the Gorham method with both commercially available and newly synthesized precursors (i.e., monomeric [2.2]paracyclophanes), meaning that one can design different types of dielectric layers using a single method.…”

Section: Introductionmentioning

confidence: 99%

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Kim

Jang

Bae

et al. 2021

ACS Appl. Mater. Interfaces

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Inorganic materials such as SiO x and SiN x are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric layers. In this study, CVD-deposited poly(p-xylylene) (PPx)-based polymers were evaluated as alternative dielectric layers. CVD-deposited PPx can produce thin, conformal, and pinhole-free polymer layers on various surfaces, including oxides and metals, without interfacial defects. Three types of commercial polymers were successfully deposited on various substrates and exhibited stable dielectric properties under frequency and voltage sweeps. Additionally, TFTs with PPx as a dielectric material and an oxide semiconductor exhibited excellent device performance; a mobility as high as 22.72 cm2/(V s), which is the highest value among organic gate dielectric TFTs, to the best of our knowledge. Because of the low-temperature deposition process and its unprecedented mechanical flexibility, TFTs with CVD-deposited PPx were successfully fabricated on a flexible plastic substrate, exhibiting excellent durability over 10000 bending cycles. Finally, a custom-synthesized functionalized PPx was introduced into top-gated TFTs, demonstrating the possibility for expanding this concept to a wide range of chemistries with tunable gate dielectric layers.

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“…Due to the increasing development of electronic equipment and being the incessant scaling down of device sizes, semiconductor devices are very close to their physical limits, there is an instantaneous need to develop next-generation technologies, in the designation of both device architecture and physics [1][2]. With the technology of getting smaller which confronts Moore's law i.e., the transistor poll on a chip multiplies at the rate of 2X per every 2 years [3], so nano electronic researchers are greatly keen on studying distinctive nanodevices like carbon nanotube/graphene tunnel field-effect transistors (FETs) and sensors [4][5][6][7][8], organic FETs [9][10], single-molecule devices [11][12], single-electron transistors (SETs) [13][14] and junction-less nanowire transistors [15][16].…”

Section: Introductionmentioning

confidence: 99%

First Principal Simulation Study of Human Body Compatible Molecular Single Electron Transistors

Bodaghzadeh

Ahmadi

et al. 2021

IEEE Access

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Considering the importance of single-electron transistors (SETs), many studies have been done over the past decade to develop the use of SETs and improve their efficiency in both the experimental and theoretical fields. One of the most important challenges in SETs study is their optimization for use in humancompatible Nanobots for purposes such as drug delivery and destruction of cancer cells. Therefore, the use of human-compatible molecules as an island in these transistors is very significant. In this work, the density functional theory (DFT) & non-equilibrium Green's function (NEGF) methods have been used for SETs modeling study of the first principle computations in the coulomb barricade system of SETs based upon the metal-organic complex of ascorbic acid (vitamin C), thiamine (vitamin B1), riboflavin (vitamin B2), nicotinic acid (vitamin B3), pantothenic acid (vitamin B5), pyridoxine (vitamin B6), biotin (vitamin B7) and folic acid (vitamin B9). The isolated molecules and SET structures are analyzed based upon premises of overall energies, ionization energies, affection energies, addition energies, charging energies, gate coupling constant, density of states (DOS) plot, and charge stability diagrams (CSDs). It's established that riboflavin (vitamin B2) in the habitat of SET a decline in the additional energy and has the lowest addition energy and lowest charging energy at the neutral charge in the SET environment along with higher conductivity as evident from the CSD comparison has been revealed. Summing up the results and analyses indicate that a riboflavin molecule is a suitable option for SETs with a molecular island compatible with the human body.

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Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate

Cited by 22 publications

References 46 publications

Fully Integrated Indium Gallium Zinc Oxide NO₂ Gas Detector

Fully Integrated Indium Gallium Zinc Oxide NO₂ Gas Detector

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

First Principal Simulation Study of Human Body Compatible Molecular Single Electron Transistors

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Highly stable flexible organic field-effect transistors with Parylene-C gate dielectrics on a flexible substrate

Cited by 22 publications

References 46 publications

Fully Integrated Indium Gallium Zinc Oxide NO2 Gas Detector

Fully Integrated Indium Gallium Zinc Oxide NO2 Gas Detector

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

First Principal Simulation Study of Human Body Compatible Molecular Single Electron Transistors

Contact Info

Product

Resources

About

Fully Integrated Indium Gallium Zinc Oxide NO₂ Gas Detector

Fully Integrated Indium Gallium Zinc Oxide NO₂ Gas Detector