Highly tailored gap-like structure for excellent thermoelectric performance

Abstract

The microstructure-dependent thermal transport property has drawn significant attention in the thermoelectric community for elevating thermoelectric performance. In this work, we characterized gap-like structures and improved their controllability in GeTe-rich...

Realizing high in-plane carrier mobility in n-type SnSe crystals through deformation potential modification

“…[1][2][3] Thermoelectric cooling devices have received widespread attention because of fast-increasing market demand in recent years. [4][5][6] The dimensionless ZT value determines the thermoelectric conversion efficiency, which is defined as ZT = S 2 sT/k, [7][8][9] where S denotes the Seebeck coefficient, s denotes electrical conductivity, T represents the absolute temperature, and k represents thermal conductivity. Generally, high electrical transport and blocked heat transport are essential in research into advanced thermoelectrics.…”

Microstructural iterative reconstruction toward excellent thermoelectric performance in MnTe

“…4 Due to the strong coupling of these intrinsic parameters, achieving an ultrahigh ZT value has remained a challenge. 5 In medium-temperature areas, the study of toxic conventional PbTe has numerous limitations, 6,7 and other promising compounds, such as GeTe, 8,9 SnTe, 10,11 SnSe, 12 Half-Heusler, 13 CoSb 3 , 14,15 and Cu 2 (Se,S) 16 etc., have been highly anticipated. Armed with the modern band engineering theory and defect engineering methods, [17][18][19] numerous middle-temperature specimens have been published.…”

Microstructural Manipulation for Enhanced Average Thermoelectric Performance: A Case Study of Tin Telluride

“…To achieve the outstanding peak ZT value ( ZT max ) in SnTe-based material, multi-step modulation methods on both band structures and microstructures are employed in the literature. − However, to accelerate the applications of the TE technique, the average ZT value ( ZT ave ) of SnTe-based materials should also be enhanced. Our previous work , has reported an effective strategy to address the issue of low ZT ave by introducing a kind of gap-like structure into the matrix. After the synthesis of Sb 2 Te 3 (SnTe) 8 alloys, ZT ave can be improved to ∼0.7 from 323 to 773 K, which is 300% higher than that of pure SnTe.…”

“…applications of the TE technique, the average ZT value (ZT ave ) of SnTe-based materials should also be enhanced. Our previous work 36,56 has reported an effective strategy to address the issue of low ZT ave by introducing a kind of gap-like structure into the matrix. After the synthesis of Sb 2 Te 3 (SnTe) 8 alloys, ZT ave can be improved to ∼0.7 from 323 to 773 K, which is 300% higher than that of pure SnTe.…”