Hot electrons in group-III nitrides at moderate electric fields

Barry, Edwin; Kim, Ki Wook; Kochelap, V. A.

doi:10.1063/1.1464666

Cited by 25 publications

(17 citation statements)

References 10 publications

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“…At the voltage of 300 V all the donors are ionized and further increase in the voltage results in a sublinear behavior of the current-voltage characteristic due to electron mobility decrease caused by free carrier heating. [16][17][18] It should be noted that in GaN samples under consideration less than 15% of donors are thermally ionized at liquid nitrogen temperature. Calculated after, 19 the dependence of free electron concentration upon the inverse temperature for uncompensated n-GaN sample with N D = 4.5ϫ 10 16 cm −3 is shown in the inset in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Shalygin

Vorobjev

Firsov

et al. 2009

Journal of Applied Physics

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Interaction between Si doping and the polarization-induced internal electric field in the AlGaN/GaN superlattice Appl. Phys. Lett. 99, 162105 (2011); 10.1063/1.3655469 Spectroscopic characterization of the electrical properties of Fe implants on Ga In P ∕ Ga As J. Appl. Phys. 102, 073711 (2007) We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels ͑at noncompensated donor density from 4.5ϫ 10 16 to 3.4ϫ 10 18 cm −3 ͒. Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

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Section: Resultsmentioning

confidence: 99%

“…The terahertz electroluminescence is observed in a wide range of doping levels ͑at noncompensated donor density from 4.5ϫ 10 16 to 3.4ϫ 10 18 cm −3 ͒. Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry.…”

Section: Impurity Breakdown and Terahertz Luminescence In N-gan Epilamentioning

confidence: 99%

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Shalygin

Vorobjev

Firsov

et al. 2009

Journal of Applied Physics

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“…Observation of non-localized hot electron effect Barry et al 32 have theoretically shown by Monte Carlo simulation that hot electrons can be generated at moderate electric fields (several kV/cm). Using the geometry of the fabricated devices (L GS /L G /L GD ¼ 1/1/10 lm), we performed 2D device simulations under the on-stress condition (V GS ¼ 0 V, V DS ¼ 20 V).…”

Section: B Observation Of Surface Leakage Currentmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

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“…The pronounced transformation of noise spectra, measured at T = 300K, with increasing the applied voltage ( Fig. la) is analyzed together with nonlinearity effects in current-voltage characteristics, which are strongly sublinear although the considered field range is still below the fields of the well-developed hot-electron regime expected from theoretical predictions [7,8].…”

Section: Resultsmentioning

confidence: 98%

Origin of Noise in AlGaN/GaN Heterostructures in the Range of 1Hz–100 MHz and its Up-Conversion in High-Frequency Noise of Oscillators

Vitusevich¹

2007

AIP Conference Proceedings

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This paper gives an overview of our recently obtained results on investigation of noise properties in undoped AlGaN/GaN high electron mobility transistors for the development of low-noise oscillators. The features observed in the carrier transport and noise spectra in twodimensional AlGaN/GaN conducting channels grown on sapphire substrate are explained on the basis of a model taking into account the overheating effect and dynamic redistribution of potential. The low-frequency noise investigation of AlGaN/GaN heterostructures grown on SiC substrate showed that passivation significantly decreased the level of channel noise, but the noise coming from contact regions was found to be dominant in passivated devices. For the frequency range of 10-100 MHz in the structures, the fluctuations of electron concentration on the first quantum level of the quantum well and the scattering of the electrons in the barrier have been established. The measured phase noise of the oscillator shows that the low-frequency noise of the microwave active device is up-converted into phase fluctuations of the high-frequency carrier. The up-conversion factor of the oscillator for an offset frequency of 100 kHz is only about 15 kHz/V, which results in very low oscillator phase noise of-105 dBc/Hz.

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Hot electrons in group-III nitrides at moderate electric fields

Cited by 25 publications

References 10 publications

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Origin of Noise in AlGaN/GaN Heterostructures in the Range of 1Hz–100 MHz and its Up-Conversion in High-Frequency Noise of Oscillators

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