Hybrid gate insulator for OTFT using dip-coating method

Sol–Gel PMMA–ZrO2Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

“…4 The groups of the organic phase produce the absorption bands observed at 2945, 1730, and 1640 cm –1 , which can be related to the stretching vibration modes of the C–H, C=0, and C=C groups, respectively. 15 The C=C signal arises from these groups, which are contained in the coupling agent and MMA monomer molecules. These groups are the bonding point for the polymerization of PMMA by free radicals, 18 and their presence in the hybrid material evidences some incomplete polymerization of the MMA monomer.…”

“…Centered at about 3350 cm –1 is observed the typical wide and strong band attributed to O–H stretching modes, mainly from Zr–OH groups resulting from the incomplete inorganic condensation in the sol–gel process, which is due to the low temperature of the curing process . The groups of the organic phase produce the absorption bands observed at 2945, 1730, and 1640 cm –1 , which can be related to the stretching vibration modes of the C–H, C0, and CC groups, respectively . The CC signal arises from these groups, which are contained in the coupling agent and MMA monomer molecules.…”

“…The appropriated combination of organic and inorganic phases in organic–inorganic hybrid materials, strongly bonded at the molecular level, is a new approach in the development of materials with reinforced specific properties for a wide variety of applications . Many of these hybrid materials can be obtained by the sol–gel method, which is a solution, low-temperature process compatible with deposition on large-area substrates. , Hybrid materials have been investigated for dielectric gate applications in organic or hybrid electronic devices. ,, A simple configuration, frequently employed, is a hybrid organic–inorganic bilayer dielectric gate, where the inorganic layer increases the capacitance and the organic one provides a smooth surface at the dielectric–semiconductor interface . High- k inorganic nanoparticles, such as ZrO 2 and TiO 2 , embedded in a polymeric matrix, such as poly­(methyl methacrylate) (PMMA) and poly­(vinylpyrrolidone), have also been tested as dielectric gate layers in TFTs.…”

“…14 Many of these hybrid materials can be obtained by the sol−gel method, which is a solution, low- temperature process compatible with deposition on large-area substrates. 10,15 Hybrid materials have been investigated for dielectric gate applications in organic or hybrid electronic devices. 4,5,10 A simple configuration, frequently employed, is a hybrid organic−inorganic bilayer dielectric gate, where the inorganic layer increases the capacitance and the organic one provides a smooth surface at the dielectric−semiconductor interface.…”

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

“…In addition, there are reports on the application of ZrO 2 doped polymer modified thin films in the dielectric gate of metal oxide thin film transistor (MOTFT) [69,70] (Figure 7b) and organic thin film transistor (OTFT) [67,71,72] (Figure 7c). Among them, many of these hybrid materials can be obtained by the sol-gel method, which is a solution, low-temperature process compatible with deposition on large-area substrates.…”