Hybrid III–V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform

Szelag, Bertrand; Hassan, Karim; Adelmini, Laetitia; Ghegin, E.; Rodriguez, Philippe; Nemouchi, F.; Brianceau, P.; Vermande, Elisa; Schembri, Antoine; Carrara, David A.; Cavalié, P.; Franchin, Florent; Roure, Marie-Christine; Sanchez, L.; Jany, Christophe; Olivier, S.

doi:10.1109/jstqe.2019.2904445

Cited by 58 publications

(35 citation statements)

References 19 publications

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“…The structure was then bonded to a 200 mm silicon wafer on which a 200 nm‐thick thermal silica layer was formed prior to the bonding. This bonding process is done at CEA‐LETI's 200 mm line . In our approach, the oxidized Si substrate is a relevant test structure to simulate the bonding interface behavior of an SOI substrate under epitaxial growth conditions.…”

Section: Fabrication Processmentioning

confidence: 99%

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Besançon

Vaissière

Dupré

et al. 2019

Physica Status Solidi (a)

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Hybrid integration of III-V materials onto silicon by wafer bonding technique is one of the mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform (SPP). Epitaxial regrowth of III-V materials on InP thin seed layer bonded to an oxidized silicon wafer has shown its potential to extend the III-V mature multiregrowth technologies into the SPP. In the approach, an epitaxial InP layer grown on a 4 in. InP wafer is directly bonded onto a SiO 2 /Si 200 mm wafer. After InP substrate removal, the new template (InPoSi) is evaluated for epitaxial regrowth: an eight periods strain-compensated AlGaInAs multiquantum wells (MQW) heterostructure surrounded by two InP cladding layers is grown by metal-organic vapor phase epitaxy (MOVPE) simultaneously on the InPoSi substrate and on an InP substrate as a reference. For the first time, in situ reflectance and curvature measurements are carried out on InPoSi, enabling the assessment of surface roughness and thermal strain of the III-V materials during growth. High material quality is obtained as attested by X-ray diffraction, photoluminescence, atomic force microscopy, and transmission electron microscopy.

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Section: Fabrication Processmentioning

confidence: 99%

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Besançon

Vaissière

Dupré

et al. 2019

Physica Status Solidi (a)

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“…In this case, the process steps following the die bonding must be done using CMOS foundry compatible process and material. Such integration has been demonstrated [147] on 200 mm wafer using localized waveguide thickening and CMOS compatible contact [148] and process, as demonstrated.…”

Section: Place Of Iii-v Materials On Si Photonics Circuitsmentioning

confidence: 97%

Building blocks of silicon photonics

Vivien

Baudot

Bœuf

et al. 2019

Future Directions in Silicon Photonics

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“…Demonstrations of III-V integration with advanced SiPh platforms have been reported. 276,277 Demonstrations of epitaxial growth of III-V on Si have also been reported despite the large lattice mismatch between Si and III-V (for example, InP has 8% lattice mismatch with Si). 278,279 The integration of III-V on silicon also provides a route for the implementation of efficient high-speed modulators because they provide (a) a large electron-induced refractive-index change, (b) a high electron mobility, and (c) a low carrier-plasma absorption.…”

Section: Iii-v Semiconductorsmentioning

confidence: 99%

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.

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Hybrid III–V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform

Cited by 58 publications

References 19 publications

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Building blocks of silicon photonics

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

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Hybrid III–V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform

Cited by 58 publications

References 19 publications

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate

Building blocks of silicon photonics

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

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Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO₂/Si Substrate