Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 2011
DOI: 10.1109/sced.2011.5744208
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Hydrodynamic device simulation of 200 GHz SiGe heterojunction bipolar transistors

Abstract: This paper studies the effect of hydrodynamic relaxation times on the base and collector currents, I B , and I C , and ac figures of merit, cut-off frequency f T , and maximum oscillation frequency, f max , for 200 GHz SiGe heterojunction bipolar transistors (HBTs). Heterojuntion bipolar transistor, SiGe semiconductor, hydrodynamic device simulation, impact ionization

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