Hydrogen content evaluation in hydrogenated nanocrystalline silicon and its amorphous alloys with germanium and carbon

Najafov, B. A.; Figarov, V. R.

doi:10.1016/j.ijhydene.2010.02.061

Cited by 10 publications

(8 citation statements)

References 16 publications

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“…The results were checked and also the method of IR absorption spectrum. Based on these results, it can be argued that Mono hydride Si-H and Si digidridnye-H 2 , which behave like the spatial barrier in the volume of films and alter the growth of nanocrystals (Figure1) [9].…”

Section: The Experimental Part and The Resultsmentioning

confidence: 96%

“…Found that derived from gas mixture of SiH 4 +H 2 +PH 3 or SiH 4 +H 2 +B 2 H 6 on quartz or silicon substrate films, with increasing concentration of PH 3 , decreases the average grain size (d) and the proportion of crystalline grains volume (Vc). When alloying with increasing concentration of boron, B 2 H 6 , d is not changed, and Vcdecreases [9].…”

Section: The Experimental Part and The Resultsmentioning

confidence: 97%

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Obtaining Thin Films of Silicon-Carbon Method of Reactive Magnetron Sputtering are used as Solar Cells

Najafov¹,

Fp²,

Ibragimov³

et al. 2021

J NanoSci Res Rep

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In the work of the various parameters studied film amorphous and nano-crystalline alloy silicon-carbon (а-nc-Si1-xCx :H (x=0÷1)) doped with phosphorus (PH3 ) and boron (B2 H6 ). Studied the properties of these films on different substrates derived from quartz, glass and Silicon-coated Fe, Al, Pd, Ni, Ti, Ag. Using transmission electron microscopy (TEM) studied the morphology obtained nano tubes. Also examine the structural properties of films by using infrared spectroscopy and x-ray diffraction of x-rays. Created by cascade solar cells area S = 1.2 cm2 and have a coefficient of 11.2%.

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Section: The Experimental Part and The Resultsmentioning

confidence: 96%

Section: The Experimental Part and The Resultsmentioning

confidence: 97%

Obtaining Thin Films of Silicon-Carbon Method of Reactive Magnetron Sputtering are used as Solar Cells

Najafov¹,

Fp²,

Ibragimov³

et al. 2021

J NanoSci Res Rep

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“…As the annealing temperature grows, the Ge-H and Si-H bonds break. The hydrogen concentration in the -Si:H films after the thermal treatment at 350 ∘ C starts to decrease, and at 700 ∘ C it practically vanishes [20]. The shift of the absorption band in the solid with respect to the characteristic frequency of this vibration mode in a gas can be determined, by using the expression [21]…”

Section: Results and Their Discussionmentioning

confidence: 99%

Optoelectronic Properties of Thin Hydrogenated α-Si1–xGex:H (x = 0÷1) Films Produced by Plasma Chemical Deposition Technique

Najafov¹,

Dadashova²

2014

Ukr. J. Phys.

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Possibilities of plasma chemical deposition of-Si1− Ge :H (= 0÷1) films undoped and doped with PH3 or B2H6 have been analyzed from the viewpoint of their application in-structures of solar cells. The optical, electric, and photo-electric properties are considered, and the amount of hydrogen contained in those films is determined. The film properties are found to strongly depend on the film composition and the hydrogenation level. The number of hydrogen atoms in the films is varied by changing the gas mixture composition, and IR absorption in-Si:H and-Ge:H films is measured. The photoconductivity is calculated using the formula ph = with = 1. The hydrogen concentration H in the films is characterized by the preferable additional parameter and was determined with the use of the vibrational stretching and wegging modes for the-Si1− Ge :H (= 0÷1) films. The-Si:H and-Si0.88Ge0.12:H films were used to fabricate three-layer solar cells with an element area of 1.3 cm 2 and an efficiency of 9.5%. K e y w o r d s: thin hydrogenated films, plasma chemical deposition, photoconductivity.

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“…In this regard, the receipt of the aforementioned films and changing their conductivity type are actual tasks. Najafov BA, Fiqarov VR [8] shows that with the change in the temperature of the substrate grow Nano crystals increases. Found that with increasing concentration of average grain size decreases RN3 (d) and the proportion of crystalline particle volume (Vc).…”

Section: Introductionmentioning

confidence: 99%

Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

Fp¹

2018

PSBJ

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Infrared (IR) absorption spectra are investigated hydrogenated amorphous solid solution films a-Si1-xGex: H (x = 0 ÷ 1) plasma chemical vapor deposition at different partial pressures of hydrogen PH2. Defined force, oscillator, which essentially depend on PH2. It is shown that the hydrogen contained in films mostly in the forms of GeH, SiH. Using integrated acquisitions JW, determined the amount of hydrogen in the films. Film properties depend on the composition and level of hydrogenation. The number of hydrogen atoms in films, varied by changing the composition of the gas mixture. In the work measured IR absorption for films a-Si1-xGex: H, aGe: H and a-Si0,88Ge0, 12: h. based on films and a-Si: H and a-Si0,88 Ge0, 12: H fabricated three-layer solar cells with an area of item 1.3 cm 2 and efficiency equal to ~ 9.5%.

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Hydrogen content evaluation in hydrogenated nanocrystalline silicon and its amorphous alloys with germanium and carbon

Cited by 10 publications

References 16 publications

Obtaining Thin Films of Silicon-Carbon Method of Reactive Magnetron Sputtering are used as Solar Cells

Obtaining Thin Films of Silicon-Carbon Method of Reactive Magnetron Sputtering are used as Solar Cells

Optoelectronic Properties of Thin Hydrogenated α-Si1–xGex:H (x = 0÷1) Films Produced by Plasma Chemical Deposition Technique

Role of Hydrogen in Films а-Si1-X Gex: H (X=0÷1) used as Solar Cells

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