Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

Benoît, Daniel; Régolini, J. L.; Morin, P.

doi:10.1016/j.mee.2007.04.071

Cited by 50 publications

(38 citation statements)

References 8 publications

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“…11-Azido-1-undecanol was synthesized from 11-bromo-1-undecanol and sodium azide according to the literature. 81 4,4,5,5,6,6,7,7,8,8,9,9, was purchased from Sigma-Aldrich. Alexa Fluor 555 azide (9) and the fluorescent labeled lectin Alexa Fluor 647 conjugate of PNA from Arachis hypogaea (peanut) were supplied by Invitrogen.…”

Section: Methodsmentioning

confidence: 99%

Copper-Free Click Biofunctionalization of Silicon Nitride Surfaces via Strain-Promoted Alkyne–Azide Cycloaddition Reactions

et al. 2012

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Cu-free "click" chemistry is explored on silicon nitride (Si(3)N(4)) surfaces as an effective way for oriented immobilization of biomolecules. An ω-unsaturated ester was grafted onto Si(3)N(4) using UV irradiation. Hydrolysis followed by carbodiimide-mediated activation yielded surface-bound active succinimidyl and pentafluorophenyl ester groups. These reactive surfaces were employed for the attachment of bicyclononyne with an amine spacer, which subsequently enabled room temperature strain-promoted azide-alkyne cycloaddition (SPAAC). This stepwise approach was characterized by means of static water contact angle, X-ray photoelectron spectroscopy, and fluorescence microscopy. The surface-bound SPAAC reaction was studied with both a fluorine-tagged azide and an azide-linked lactose, yielding hydrophobic and bioactive surfaces for which the presence of trace amounts of Cu ions would have been problematic. Additionally, patterning of the Si(3)N(4) surface using this metal-free click reaction with a fluorescent azide is shown. These results demonstrate the ability of the SPAAC as a generic tool for anchoring complex molecules onto a surface under extremely mild, namely ambient and metal-free, conditions in a clean and relatively fast manner.

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Section: Methodsmentioning

confidence: 99%

Copper-Free Click Biofunctionalization of Silicon Nitride Surfaces via Strain-Promoted Alkyne–Azide Cycloaddition Reactions

et al. 2012

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“…Note that a N 2 /H 2 passivation anneal is performed, but before the cavity etch. After the dielectric layers opening, this anneal becomes no more efficient to cure defects because the encapsulation of the hydrogen species inside the back-end dielectrics is not performed during the anneal, as explained in ref [5].…”

Section: Methodsmentioning

confidence: 99%

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Carrere

Oddou

Richard

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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A new plasma induced damage mechanism on CMOS image sensor is analyzed. An increase of the mean pixel dark current is observed after the plasma etch of a cavity on the pixel area. The degradation increases non-linearly when the dielectric layers between the photodiode and the plasma become thinner. This can be explained by a photo generation phenomenon in the dielectric nitride layer, induced by the plasma UV, and assisted by the wafer surface charge. This mechanism leads to a positive fix charge creation on the pixel surface, which can next deplete the top P layer of the pinched photodiode. Process and pixel architecture optimization ways are finally proposed.978-1-4244-6661-0/10/$26.00 ©2010 IEEE

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“…It may be noted that out-diffusion of molecular hydrogen was found to depend on stoichiometry in a-SiN x :H films. 24,25 In the present work, we study the evolution of luminescence of PECVD grown a-SiN x :H thin films prior and subsequent to low temperature hydrogen plasma annealing (HPA). The role of stoichiometry and HPA temperature is investigated.…”

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confidence: 99%

Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

Bommali

Ghosh

Prakash

et al. 2014

Journal of Applied Physics

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Articles you may be interested inAccurate determination of optical bandgap and lattice parameters of Zn1-x Mg x O epitaxial films ( 0 ≤ x ≤ 0.3 ) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire A hydrogen storage layer on the surface of silicon nitride films Low temperature (250-350 C) hydrogen plasma annealing (HPA) treatments have been performed on amorphous hydrogenated silicon nitride (a-SiN x :H) thin films having a range of compositions and subsequent modification of photoluminescence (PL) is investigated. The PL spectral shape and peak positions for the as deposited films could be tuned with composition and excitation energies. HPA induced modification of PL of these films is found to depend on the N/Si ratio (x). Upon HPA, the PL spectra show an emergence of a red emission band for x 1, whereas an overall increase of intensity without change in the spectral shape is observed for x > 1. The emission observed in the Si rich films is attributed to nanoscale a-Si:H inclusions. The enhancement is maximum for off-stoichiometric films (x $ 1) and decreases as the compositions of a-Si (x ¼ 0) and a-Si 3 N 4 (x ¼ 1.33) are approached, implying high density of non-radiative defects around x ¼ 1. The diffusion of hydrogen in these films is also analyzed by Elastic Recoil Detection Analysis technique. V C 2014 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4864255] 053525-2Bommali et al.

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Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

Cited by 50 publications

References 8 publications

Copper-Free Click Biofunctionalization of Silicon Nitride Surfaces via Strain-Promoted Alkyne–Azide Cycloaddition Reactions

Copper-Free Click Biofunctionalization of Silicon Nitride Surfaces via Strain-Promoted Alkyne–Azide Cycloaddition Reactions

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

Hydrogen plasma induced modification of photoluminescence from a-SiNx:H thin films

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