1987
DOI: 10.1557/proc-108-247
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Hydrogen Diffusion Between Plasma-Deposited Silicon Nitridepolyimide Polymer Interfaces

Abstract: A Nuclear Reaction Analysis (NRA) for Hydrogen technique was used to analyze the hydrogen concentration near Plasma Enchanced Chemical Vapor Deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF 4 + 02 (8% 02) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profi… Show more

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