Hyperfine Splitting in Spin Resonance of Group V Donors in Silicon

Fletcher, R. C.; Yager, W. A.; Pearson, G. L.; Merritt, F. R.

doi:10.1103/physrev.95.844

Cited by 123 publications

(21 citation statements)

References 4 publications

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“…(4) by varying a D and b D separately for each. We then find the best values of b and B by finding a good match between our predictions and measured ground-state donor energy [19] and hyperfine coupling [20,21] for Si:P. We emphasize that, unlike some previous multivalley EMT treatments, the envelopes we have used have the crucial property of anisotropy. This is vital for calculations of properties of a donor-donor system, which clearly has a broken symmetry along the vector connecting the two donors.…”

Section: Theorysupporting

confidence: 52%

Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy

et al. 2014

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Donors in silicon are now demonstrated as one of the leading candidates for implementing qubits and quantum information processing. Single qubit operations, measurements, and long coherence times are firmly established, but progress on controlling two qubit interactions has been slower. One reason for this is that the interdonor exchange coupling has been predicted to oscillate with separation, making it hard to estimate in device designs. We present a multivalley effective mass theory of a donor pair in silicon, including both a central cell potential and the effective mass anisotropy intrinsic in the Si conduction band. We are able to accurately describe the single donor properties of valley-orbit coupling and the spatial extent of donor wave functions, highlighting the importance of fitting measured values of hyperfine coupling and the orbital energy of the 1s levels. Ours is a simple framework that can be applied flexibly to a range of experimental scenarios, but it is nonetheless able to provide fast and reliable predictions. We use it to estimate the exchange coupling between two donor electrons and we find a smoothing of its expected oscillations, and predict a monotonic dependence on separation if two donors are spaced precisely along the [100] direction.

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Section: Theorysupporting

confidence: 52%

Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy

et al. 2014

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“…In crystalline silicon a hyperfine splitting ͑i.e., a separation of the respective resonance lines͒ of ⌬HFSϭ42 G at liquid helium temperature has already been observed in the earliest measurements 25 ͑see also Sec. III C͒.…”

Section: E Hyperfine Interactionmentioning

confidence: 83%

“…38,39 Only the wave function of the A 1 state has a nonvanishing amplitude at the nucleus and gives rise to hyperfine interaction resulting in the ESR observation of two lines. 25,38 For higher temperatures, however, an increasing part of the electrons is activated into excited states or even conduction-band states with no hyperfine interaction and the hyperfine lines broaden as a result of exchange scattering between donor and conduction-band electrons. With increasing donor concentration the donors form clusters of two or more donor atoms leading to additional features in the resonance spectrum and also the gradual disappearance of the hf line pair.…”

Section: Aϭmentioning

confidence: 99%

“…Therefore, a detailed comparison of c-Si:H with the large amount of data available for crystalline silicon is necessary. Signals attributed to ͑i͒ electrons located at phosphorus donors, 25,26 ͑ii͒ electrons in clusters of two or more dopant atoms 16,21,27 and ͑iii͒ electrons in conduction or impurity band states 9,13,28,29 are found in crystalline material, where a distinction between the different kinds of states is often difficult. It is the aim of this study to establish a clear relationship between ESR and transport measurements in n-type microcrystalline silicon, to identify the origin of the CE resonance in the different temperature and doping regimes and to interpret the observed changes in spin density, g value and linewidth with regard to this identification.…”

Section: Introductionmentioning

confidence: 99%

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Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon

et al. 1999

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Phosphorus-doped microcrystalline silicon with high-crystalline volume fraction was prepared by very highfrequency plasma enhanced chemical vapor deposition. The material is studied by electron spin resonance and transport measurements as a function of doping and temperature. In all samples a resonance at gϭ1.998 is found with spin densities very similar to the phosphorus dopant density and also the carrier density at high doping levels. This resonance is related to doping-induced excess electrons. Its spin density is largely temperature independent, and the corresponding electrons occupy dopant or conduction band tail states at low temperatures, while they are excited into the conduction band at high T. This gradual transition is accompanied by changes in linewidth, g value and spin-lattice relaxation time. Hyperfine interaction with P nuclei is only observed for intermediate doping levels and has very small intensity. From the value of the hyperfine splitting, the effective Bohr radius of the impurity wave function is estimated to 12 Å. Transport at low temperatures (TϽ20 K) proceeds via hopping between donor states and/or conduction-band tail states. A thermal activation energy of 3.5 meV and similar localization lengths as from the hyperfine data are found for this process. At temperatures above 20 K electronic transport is governed by a wide distribution of activation energies.

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“…one for each projection, M I , of the 121 Sb nuclear spin, accounting for six absorption lines in the ESR spectrum of 121 Sb [6].…”

mentioning

confidence: 99%

Stark Tuning of Donor Electron Spins in Silicon

Bradbury¹,

Tyryshkin

Sabouret

et al. 2007

AIP Conference Proceedings

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Abstract:We report Stark shift measurements for 121 Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28 Si epi-layer are used to apply electric fields. Two Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman gfactor. The hyperfine term prevails at X-band magnetic fields of 0.35T, while the g-factor term is expected to dominate at higher magnetic fields. A significant linear Stark effect is also resolved presumably arising from strain.

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Hyperfine Splitting in Spin Resonance of Group V Donors in Silicon

Cited by 123 publications

References 4 publications

Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy

Exchange coupling between silicon donors: The crucial role of the central cell and mass anisotropy

Electron spin resonance investigation of electronic states in hydrogenated microcrystalline silicon

Stark Tuning of Donor Electron Spins in Silicon

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