IGBT junction and coolant temperature estimation by thermal model

Wu, Zhihong; Su, Xiezu; Zhu, Yuan

doi:10.1016/j.microrel.2018.06.018

Cited by 27 publications

(10 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The traditional thermal model shown in Fig. 4(a) is the heat transfer model based on the coolant temperature at the inlet of the inverter, and the mathematical model is shown in (20). This method requires the knowledge of coolant temperature.…”

Section: A Traditional Thermal Modelmentioning

confidence: 99%

“…Generally, two groups of thermal model can be found in the literature, including the thermal simulation, such as finiteelement method (FEM) [14,17] and thermal networks, such as Cauer or Foster equivalent thermal models [18][19][20]. In [14], an updated Cauer thermal model is proposed under short-circuit and overloads, and FEM thermal simulations are applied to identify the temperature-dependent thermal impedance.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

IGBT Junction Temperature Measurement Under Active-Short-Circuit and Locked-Rotor Modes in New Energy Vehicles

Zhu

Xiao

et al. 2020

IEEE Access

View full text Add to dashboard Cite

Active-short-circuit and locked-rotor modes are common abnormal operations in new energy vehicles. The IGBT junction temperature measurement for these two operating conditions is a challenging problem due to the unexpected large current and the asymmetric operation of semiconductor chips. In addition, different cooling flow rates have a significant influence on the heat dissipation, which will also have an impact on the building of the thermal model. Based on these difficulties, a modified Foster thermal network under active-short-circuit and locked-rotor modes has been presented considering different cooling conditions. The power loss models of the semiconductor chip under abnormal conditions are developed and a modified Foster thermal network based on the NTC temperature sensor is proposed. The model can be adapted to different cooling conditions since the thermal impedance fluctuates slightly at different cooling flow rates. The proposed thermal model is verified with inverter application under active-short-circuit and locked-rotor modes and the experimental performance shows good accuracy compared with the infrared camera measurement results. INDEX TERMS Insulated gate bipolar transistors(IGBTs);active short circuit(ASC) mode; locked-rotor mode; thermal models.

show abstract

Section: A Traditional Thermal Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

IGBT Junction Temperature Measurement Under Active-Short-Circuit and Locked-Rotor Modes in New Energy Vehicles

Zhu

Xiao

et al. 2020

IEEE Access

View full text Add to dashboard Cite

show abstract

“…The parameters of package materials are shown in Table 1, which will be used to calculate the parameters of the traditional seven‐order Cauer thermal network [19, 29, 30]. for each order, thermal resistance and heat capacitance can be calculated by the following equations:

R_{i} = \frac{s_{i}}{k_{i} A_{i}}

C_{i} = c_{i} \cdot ρ_{i} \cdot s_{i} \cdot A_{i}

where

s_{i}

is the thickness,

k_{i}

is thermal conductivity,

c_{i}

is the specific heat capacity,

ρ_{i}

is the density of the ith layer, and

A_{i}

is the effective heat conduction area.…”

Section: Backgrounds Of Modelling Environmentmentioning

confidence: 99%

“…The seven‐order Cauer thermal network simulates the actual heat conduction process of heat source inside the IGBT module. However, unlike circuit, heat conduction is a three‐dimensional physical process, taking the approximation of one‐dimensional heat conduction will cause significant errors [29–32].…”

Section: Backgrounds Of Modelling Environmentmentioning

confidence: 99%

Improved Cauer thermal network considering thermal coupling effects of multi‐chip modules

Yuan

et al. 2020

IET power electron.

View full text Add to dashboard Cite

“…Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device which has a fully controlled type with high input impedance, fast switching speed, low driving power, simple drive circuit, high current density, and reduced saturation voltage [1]- [3]. IGBT is widely used in new energy [4], high-speed rail [5], military [6],etc.…”

Section: Introductionmentioning

confidence: 99%

Electro-Thermal-Mechanical Multiphysics Coupling Failure Analysis Based on Improved IGBT Dynamic Model

Zhou

et al. 2019

IEEE Access

View full text Add to dashboard Cite

Failure of the power device can have a very large impact on the entire power circuit. IGBT as the main power device, ensuring its reliability becomes more and more important. In different environments, there will be large differences in the failure rate of IGBTs. Therefore, studying the failure mechanism of IGBT is of great significance to ensure the reliability of IGBT. Firstly, the IGBT dynamic model is constructed and the model is improved to correct the power consumption error. Then the IGBT finite element model is used to analyze the electro-thermal-force of different material layers, at the same time, the distribution of stress and temperature between different materials are analyzed. Finally, the JavaScript script is used to generate random defects of the solder layer, and the effects of different defects of the solder layer on the weakest part of the IGBT are studied, including voids, cracks, and solder layer falling off. The results of the analysis show that after the IGBT defects reach a certain level, the solder layer voids, the solder layer fall off, and the solder layer cracks have a great influence on the IGBT junction temperature and stress. Among them, shedding and cracks have a greater influence on the stress of the solder layer. INDEX TERMS IGBT, dynamic model, electro-thermal-mechanical, three-dimensional finite element.

show abstract

IGBT junction and coolant temperature estimation by thermal model

Cited by 27 publications

References 3 publications

IGBT Junction Temperature Measurement Under Active-Short-Circuit and Locked-Rotor Modes in New Energy Vehicles

IGBT Junction Temperature Measurement Under Active-Short-Circuit and Locked-Rotor Modes in New Energy Vehicles

Improved Cauer thermal network considering thermal coupling effects of multi‐chip modules

Electro-Thermal-Mechanical Multiphysics Coupling Failure Analysis Based on Improved IGBT Dynamic Model

Contact Info

Product

Resources

About