III–V compound multi-junction solar cells: present and future

Yamaguchi, Masafumi

doi:10.1016/s0927-0248(02)00168-x

Cited by 285 publications

(155 citation statements)

References 6 publications

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“…Specifically, we measure the lattice rotations and strain fields associated with a single misfit dislocation in a freestanding GaAs/In 0.2 Ga 0.8 As/GaAs membrane. This material has intrinsic scientific importance as a key ingredient in integrated circuits, light-emitting diodes and solar cells 30,31 . A thin membrane sample is chosen in order to allow a direct comparison with TEM.…”

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confidence: 99%

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

et al. 2013

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Understanding and controlling the behaviour of dislocations is crucial for a wide range of applications, from nano-electronics and solar cells to structural engineering alloys. Quantitative X-ray diffraction measurements of the strain fields due to individual dislocations, particularly in the bulk, however, have thus far remained elusive. Here we report the first characterization of a single dislocation in a freestanding GaAs/In 0.2 Ga 0.8 As/GaAs membrane by synchrotron X-ray micro-beam Laue diffraction. Our experimental X-ray data agrees closely with textbook anisotropic elasticity solutions for dislocations, providing one of few experimental validations of this fundamental theory. On the basis of the experimental uncertainty in our measurements, we predict the X-ray beam size required for threedimensional measurements of lattice strains and rotations due to individual dislocations in the material bulk. These findings have important implications for the in situ study of dislocation structure formation, self-organization and evolution in the bulk.

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confidence: 99%

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

et al. 2013

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“…The world's total energy consumption for 2002 was estimated at about 1Á2 10 14 KWh 2 , of which about 1/10 was used as electricity. Fossil fuels, in particular coal, oil and gas, contributed with about 80% and 65% to the generation of world total energy and electricity, respectively ( Figure 1).…”

Section: Towards a New World-energy Scenariomentioning

confidence: 99%

“…[11][12][13][14][15][16][17] During the past 4 years Japan, Germany and USA have emerged as leaders in the total kWp installed, sharing together about 90% of the world market. Globally, in 2003 about 753 MWp PV systems were installed, and the 1 GWp barrier was exceeded in 2004.…”

Section: Towards a New World-energy Scenariomentioning

confidence: 99%

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Bosi

Pelosi

2006

Progress in Photovoltaics

177

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III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article will review the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells and will discuss future trends and possibilities of bringing III-V technology from space to Earth

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“…In recently year, multi-junction solar cells have attracted increasing attention for application in concentrator photovoltaic (CPV) system owing to their very high conversion efficiency [1][2][3]. Multi-junction solar cells consisting of InGaP, InGaAs, and Ge diodes are recognized as super high efficiency cells and are used for space application.…”

Section: Introductionmentioning

confidence: 99%

Reduction of Temperature in Concentrator Photovoltaic Module Using Coating with High Thermal Emissivity and Conductivity

Nakamura¹,

Sakamoto²,

Nishioka³

2016

MATEC Web of Conferences

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Abstract.The temperature of solar cells considerably increases under light-concentrating operations, and the conversion efficiency of solar cells decreases with increasing temperature.It is very important to reduce the cell temperature in concentrator photovoltaic modules. The thermal radiation layers with high thermal emissivity and thermal conductivity was coated on the aluminum samples which is used for the chassis of concentrator photovoltaic and the effect was evaluated under the conditions with wind. The temperature of sample with coating showed lower temperature than that without coating. In the condition with wind, the coated sample with high thermal emissivity and high thermal conductivity showed the lowest temperature due to the effect of thermal radiation and thermal conduction. 1IntroductionIn recently year, multi-junction solar cells have attracted increasing attention for application in concentrator photovoltaic (CPV) system owing to their very high conversion efficiency [1][2][3]. Multi-junction solar cells consisting of InGaP, InGaAs, and Ge diodes are recognized as super high efficiency cells and are used for space application. Light concentration is one of the most important factors for the development of an advanced PV system using high-efficiency solar cells. High-efficiency multi-junction cells under high light concentration have been investigated for terrestrial application [4][5][6][7].The temperature of solar cells considerably increases under light-concentrating operations, and the conversion efficiency of solar cells decreases with increasing temperature [8][9][10]. It is therefore very important to reduce the cell temperature in CPV modules. In this study, thermal radiation layers with high thermal emissivity and thermal conductivity was coated on the aluminum samples which is used for the chassis of CPV and the effect was evaluated under the conditions with wind. Fig.1 shows the samples used in this study. Aluminum samples(60 mm width x 95 mm lengthx 3 mm thickness) wereprepared. In order to insert a thermalsensor, a hole of 1.1mm in diameter with 10mm in depth was made at thecenter of cross-section. In order to detect the sample temperature, Pt100 was inserted in the hole. The heat conductive grease was used in the hole to detect the exact temperature. Three aluminum plates were prepared; "high emissivity type" with high thermal emissivity material, "high emissivity and conductivity type" with high thermal emissivity and high thermal conductivity material and "reference" without coating.The thermal radiation layer [Pelcool (R), PELNOX Ltd.] was coated on the aluminumwhich is used as the material of the chassis of CPV module by a spray coating method. The thickness of the layer was 30 μm. The layer consisted of acrylate resin and inorganic fillers. Heater was fixed with double faced tape on each sample. Fig.2 shows a schematic diagram of sample setup. Three samples were connected with parallel circuit and bias was applied using a biporal power supply with constant voltage operation. T...

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III–V compound multi-junction solar cells: present and future

Cited by 285 publications

References 6 publications

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Reduction of Temperature in Concentrator Photovoltaic Module Using Coating with High Thermal Emissivity and Conductivity

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