Imaging mechanism and contrast separation in low-voltage scanning electron microscopy imaging of carbon nanotube arrays on SiO2/Si substrate

Zhang, Boxiang; Zhang, Zhiyong; Jin, Chuanhong

doi:10.1016/j.carbon.2023.118175

Cited by 3 publications

(4 citation statements)

References 46 publications

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“…There are approximately 100–110 SWCNT bundles per micrometer in our SWCNT film, as shown in Figure c. According to a very recent report by Jin and Zhang et al in 2023, the circular cross-section we observed here is a bundle of SWCNTs, containing 3–5 individual tubes of SWCNTs . The actual distribution of SWCNTs is schematically depicted in Figure d.…”

Section: Results and Discussionsupporting

confidence: 68%

“…In summary, the HiPCO SWCNT arrays we obtained in this work represent wafer-level films that simultaneously achieve a high degree of alignment and a high density. However, it is worth noting that the SWCNT density in previous reports might be underestimated because the packing states of aligned SWCNTs as bundles have just been revealed in the recent TEM study …”

Section: Results and Discussionmentioning

confidence: 95%

“…However, it is worth noting that the SWCNT density in previous reports might be underestimated because the packing states of aligned SWCNTs as bundles have just been revealed in the recent TEM study. 45 In our final analysis, we achieved an alignment within 10.2°a nd a density of 300−550 tubes/μm for the HiPCO SWCNT film. This represents the first successful preparation of waferlevel HiPCO SWCNT aligned arrays with both a high degree of alignment and a high density.…”

Section: Characterization Of Hipco S-swcnt Solutionmentioning

confidence: 81%

“…According to a very recent report by Jin and Zhang et al in 2023, the circular crosssection we observed here is a bundle of SWCNTs, containing 3−5 individual tubes of SWCNTs. 45 The actual distribution of SWCNTs is schematically depicted in Figure 5d. Therefore, we estimate the density of the aligned SWCNTs to be between 300 and 550 tubes/μm.…”

Section: ■ Introductionmentioning

confidence: 99%

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Aligned Arrays of Semiconducting HiPCO SWCNTs Prepared by Liquid–Liquid Interface Confinement Self-Assembly for Optic–Electronic Applications

Nan,

Liu,

Zhao

et al. 2024

ACS Appl. Nano Mater.

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In recent years, significant breakthroughs have been achieved in the fabrication of wafer-scale aligned arrays of semiconductor single-wall carbon nanotubes (s-SWCNTs) based on liquid−liquid interfacial self-assembly techniques. High pressure catalytic CO (HiPCO) s-SWCNTs, characterized by small diameters, large band gaps, and multiband optical absorption, hold significant applications in both optical and electronic domains. However, during assembly, HiPCO s-SWCNTs are prone to bending and entanglement, thereby introducing increased complexity into the assembly processes. Here, we evaluate two interfacial assembly methods for their efficacy in aligning HiPCO s-SWCNTs and scrutinize the interfacial phenomena within these two liquid−liquid confinement systems. Utilizing one of these methods, namely, dimension-limited self-alignment, aligned HiPCO s-SWCNT arrays on 4-inch wafers were successfully fabricated. The achieved alignment degree is 10.2°, and the array density of the HiPCO s-SWCNTs reached 300−550 tubes per micrometer. These scientific findings contribute to a more comprehensive understanding of the assembly process of inhomogeneous SWCNTs within confined interfaces and lay an important foundation for the optical and electronic applications of small-diameter HiPCO s-SWCNTs.

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Section: Results and Discussionsupporting

confidence: 68%

Section: Results and Discussionmentioning

confidence: 95%

Section: Characterization Of Hipco S-swcnt Solutionmentioning

confidence: 81%

Section: ■ Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Aligned Arrays of Semiconducting HiPCO SWCNTs Prepared by Liquid–Liquid Interface Confinement Self-Assembly for Optic–Electronic Applications

Nan,

Liu,

Zhao

et al. 2024

ACS Appl. Nano Mater.

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Self-Powered cobalt nanocluster decorated flexible graphene based Tribo-Sensors for respiratory diagnosis of critical asthma patient

Das,

Rani,

Kumar

et al. 2024

Chemical Engineering Journal

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Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons

Sarkar,

Adams,

Dar

et al. 2024

Microscopy and Microanalysis

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In this article, porous GaN distributed Bragg reflectors (DBRs) were fabricated by epitaxy of undoped/doped multilayers followed by electrochemical etching. We present backscattered electron scanning electron microscopy (BSE-SEM) for sub-surface plan-view imaging, enabling efficient, non-destructive pore morphology characterization. In mesoporous GaN DBRs, BSE-SEM images the same branching pores and Voronoi-like domains as scanning transmission electron microscopy. In microporous GaN DBRs, micrographs were dominated by first porous layer features (45 nm to 108 nm sub-surface) with diffuse second layer (153 nm to 216 nm sub-surface) contributions. The optimum primary electron landing energy (LE) for image contrast and spatial resolution in a Zeiss GeminiSEM 300 was approximately 20 keV. BSE-SEM detects porosity ca. 295 nm sub-surface in an overgrown porous GaN DBR, yielding low contrast that is still first porous layer dominated. Imaging through a ca. 190 nm GaN cap improves contrast. We derived image contrast, spatial resolution, and information depth expectations from semi-empirical expressions. These theoretical studies echo our experiments as image contrast and spatial resolution can improve with higher LE, plateauing towards 30 keV. BSE-SEM is predicted to be dominated by the uppermost porous layer’s uppermost region, congruent with experimental analysis. Most pertinently, information depth increases with LE, as observed.

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Imaging mechanism and contrast separation in low-voltage scanning electron microscopy imaging of carbon nanotube arrays on SiO2/Si substrate

Cited by 3 publications

References 46 publications

Aligned Arrays of Semiconducting HiPCO SWCNTs Prepared by Liquid–Liquid Interface Confinement Self-Assembly for Optic–Electronic Applications

Aligned Arrays of Semiconducting HiPCO SWCNTs Prepared by Liquid–Liquid Interface Confinement Self-Assembly for Optic–Electronic Applications

Self-Powered cobalt nanocluster decorated flexible graphene based Tribo-Sensors for respiratory diagnosis of critical asthma patient

Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons

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