Impact Ionization in InAlAs/InP Single Channel Heterojunction Field Effect Transistors

Abstract

We report on experimental observation of impact ionization in InAlAs/InP heterojunction field effect transistors (HFET) with an InP channel. The I g(V gs) V ds static characteristics and electroluminescence intensity are compared, exhibiting similar evolutions with bias conditions. These observations indicate that minority carriers (holes) are generated in the structure, through an impact ionization process. This process, unusual in InP channel FETs, is attributed to the staggered InAlAs/InP interface.