Silicon
 2022
DOI: 10.1007/s12633-022-01989-w
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Impact of Gate Length and Doping Variation on the DC and Analog/RF Performance of sub - 3nm Stacked Si Gate-All-Around Nanosheet FET

Nisha Yadav
1
,
Sunil Jadav
2
,
Gaurav Saini
3
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Cited by 6 publications
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