Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Sehra, Khushwant; Kumari, Vandana; Gupta, Mridula; Mishra, Meenal; Rawal, D. S.; Saxena, Manoj

doi:10.1088/1361-6641/abdba3

Cited by 12 publications

(7 citation statements)

References 42 publications

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“…The capture cross sections for electrons (σ n ) and holes �σ p � were set to 1 × 10 −13 cm 2 . Further, since the bulk traps in GaN buffer are responsible for the degradation in the output admittance parameters [42][43][44], acceptor type traps with E T = 0.45 eV and bulk trap density of 1.5 × 10 16 cm −3 were defined in GaN buffer with capture cross sections, σ n and σ p set to 1 × 10 −13 cm 2 respectively. The trapping definitions are in accordance with the experimental studies on similar AlGaN/GaN heterostructures [42][43][44].…”

Section: B Simulation and Calibration Methodologymentioning

confidence: 99%

“…Further, since the bulk traps in GaN buffer are responsible for the degradation in the output admittance parameters [42][43][44], acceptor type traps with E T = 0.45 eV and bulk trap density of 1.5 × 10 16 cm −3 were defined in GaN buffer with capture cross sections, σ n and σ p set to 1 × 10 −13 cm 2 respectively. The trapping definitions are in accordance with the experimental studies on similar AlGaN/GaN heterostructures [42][43][44]. Yang et al [45] have also demonstrated through DLTS measurements the evolution of electron and hole traps in doped GaN cap layers, which realize enhancement mode operation.…”

Section: B Simulation and Calibration Methodologymentioning

confidence: 99%

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Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

et al. 2022

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This work investigates the cumulative dose 60 Co gamma (γ) -ray irradiation effects on enhancement mode HEMT devices inheriting 3D -Electron and Hole Gases for dosimeter applications. The devices are irradiated through a 60 Co source and demonstrate the enhancement in the drain current metrics. To elucidate, the said devices were irradiated through different mechanisms and the Compton effect was investigated through contour plots via TCAD simulations. The degradation of Schottky Gate contact and insulator charging affects the 2D -Hole Gas at the GaN cap and thereby affects the bottleneck at the 3DEG sheet. This significantly affects the OFF -state leakage components of the said device and can therefore be exploited for potential use in sensing and dosimeter applications. The leakage components can be exploited further to improve the linearity of the dosimeter by considering different grading profiles of the AlGaN layer. In this regard, a workflow for optimizing the sensitivity and linearity of the dosimeter through different graded profiles is also presented. Amongst all, gaussian graded profiles have been identified as the best -case scenario considering the sensitivity and exhibiting a linear operation.

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Section: B Simulation and Calibration Methodologymentioning

confidence: 99%

Section: B Simulation and Calibration Methodologymentioning

confidence: 99%

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

et al. 2022

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“…Compared with Si and GaAs, the breakdown eld of the third-generation semiconductor materials such as GaN and SiC is one order of magnitude higher [8]. In the same size, the breakdown voltage of GaN and SiC devices is one order of magnitude higher than that of Si and GaAs devices, ensuring the high-power output of the device [9][10][11][12]. Because SiC lacks a heterojunction structure, the device structure mainly uses metal semiconductor eld effect transistors, and eld effect transistors are surface devices, the carrier transport is affected by the surface, resulting in low mobility, which limits the devices in the high-frequency eld applications.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Electrical Characterization of AlGaN/GaN HEMT with Multi-finger Gate

Zhao

et al. 2021

Preprint

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This paper presents an exhaustive TCAD based comparison of the multi-gate and T-gate AlGaN/GaN HEMT. This paper simulates the DC and RF characteristics of the device and makes an accurate comparison. The important feature of the device such as threshold voltage, drain current output characteristics, transconductance, cut-off frequency, and maximum oscillation frequency were obtained. It is concluded that the shape optimization of the HEMT with multi-finger gates and the advantages over traditional T-gate devices. The device of two-finger gate with 50nm spacing has the best output characteristics, and its maximum saturation current is about 110% the size of the device of four-finger gate with 200nm at VGS=0V. And the gm and the gain of the device with 50nm spacing two-finger gate is 76mS/mm larger than the HEMT of three-finger gate with 200nm. In addition, we also conducted a simulation in the case of changing only refers to finger-gate length and cap-gate length. And it is concluded that the two-finger gate HEMT with 250nm finger-gate length and 2.0µm cap-gate length has the best output characteristics, which output current is 0.159 A/µm at VGS=-1.5V. The results show that AlGaN/GaN HEMT with multi-finger gate have great potential for high power and high frequency applications electronic devices.

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“…As the size of the MOSFET decreases, several short-channel phenomena such as hot carriers, DIBL (drain induced barrier lowering), 1 leakage current, and interface trap charges 2 reduce the device's performance. Numerous improved topologies, such as multigate MOSFETs, 3 pi-gate MOSFETs, 4 and cylindrical MOSFETs, 5 have been described to address these deficiencies. High-k dielectrics with metal gate-stacks, shallow junctions, and replacing the silicon channel with materials that can move more electrons are some of the techniques that can make it easier to make more advanced and aggressive scaling of MOSFETs.…”

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confidence: 99%

A Charge-Based Analytical Model for Gate All Around Junction-Less Field Effect Transistor Including Interface Traps

Raut

Nanda

2022

ECS J. Solid State Sci. Technol.

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This article proposes an analytical charge-based model that incorporates interface trapping. The model's applicability to all operating zones includes various interface trap charges with varying doping concentrations. Using the analytical model, the impact of interface traps on different electrical parameters, such as channel potential, surface potential, electric field, and drain current, is examined. The transconductance and cut-off frequency models are also developed from the drain current model. To validate our model, the analytical model results were compared with TCAD device simulation results and available experimental data from the literature. The Fermi level location of interface traps greatly influences surface potential in the bandgap, leading to subthreshold deterioration and flat band shifting in Junction-Less Field Effect Transistor (GAAJLFET) with SiO2 as a gate insulator, which leads to performance degradation of different device parameters. To decrease the impact of the interface trap on the device's characteristics without impairing the performance, a suitable device with SiO2 and high-k gate-stack as an insulator is designed and compared with GAAJLFET with SiO2 as a gate insulator. A GAAJLFET with SiO2 as an insulating material has very different device parameters than a GAAJLFET with SiO2 and high-k gate-stack as a gate insulating material.

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Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Cited by 12 publications

References 42 publications

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

Interplay Between γ–Ray Irradiation and 3DEG for Dosimeter Applications

Comparison of Electrical Characterization of AlGaN/GaN HEMT with Multi-finger Gate

A Charge-Based Analytical Model for Gate All Around Junction-Less Field Effect Transistor Including Interface Traps

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