Impact of polarization on an attenuated phase shift mask with ArF hyper-numerical aperture lithography

Satō, Takashi; Endo, Ayako; Mimotogi, Akiko; Motomizu, Shoji; Satõ, Kazuya; Tanaka, Satoshi

doi:10.1117/1.2397065

Cited by 6 publications

(2 citation statements)

References 7 publications

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“…Optimization of the mask, using MoSi instead of Cr, and different attenuation factors, was not included in this study but can give additional improvement. [15] The Contact layer was not included in the work because it is not a line-cut double patterning layer. However, based on the results of the Gate cut optimization work, it is likely that the Contact layer will require a limited pitch range, it may be split into Active and Gate contacts, and it may require subresolution features.…”

Section: Simulation Results For 22nm Logicmentioning

confidence: 99%

32nm and below logic patterning using optimized illumination and double patterning

Smayling

Axelrad

2009

SPIE Proceedings

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Line/space dimensions for 32nm generation logic are expected to be ~45-50nm at ~90-100nm pitch. It is likely that the node will begin at the upper end of the range, and then shrink by ~10% to a "28nm" node. For the lower end of the range, even with immersion scanners, the Rayleigh k 1 factor is below 0.32. The 22nm logic node should begin with minimum pitches of approximately 70nm, requiring some form of double patterning to maintain k 1 above 0.25.Logic patterning has been more difficult than NAND Flash patterning because random logic was designed with complete "freedom" compared to the very regular patterns used in memory. The logic layouts with bends and multiple pitches resulted in larger rules, un-optimized illumination, and a poorly understood process windows with little control of context-dependent "hot spots."[1]The introduction of logic design styles which use strictly one-directional lines for the critical levels now gives the opportunity for illumination optimization. Gridded Design Rules (GDR) have been demonstrated to give areacompetitive layouts at existing 90, 65, and 45nm logic nodes while reducing CD variability.[2] These benefits can be extended to ≤32nm logic using selective double pass patterning.

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Section: Simulation Results For 22nm Logicmentioning

confidence: 99%

32nm and below logic patterning using optimized illumination and double patterning

Smayling

Axelrad

2009

SPIE Proceedings

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“…PSMs are photomasks that take advantage of wave interferences generated by phase differences to improve image resolution in photolithography [10]. With the feature size of photo-masks going down, polarization effect is on the rise [12], thus it is important to model the masks accurately with rigorous simulation methods. During the last decade, various simulation methods have been proposed for photo-masks, including the finite-difference time-domain method (FDTD) [14], the finite element method (FEM) [3], the waveguide method (WG) [11], and the rigorous coupled wave analysis (RCWA) [9].…”

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confidence: 99%

Accurate simulations of 2-D phase shift masks with a generalized discontinuous Galerkin (GDG) method

Ji¹,

Cai²

2011

Discrete &Amp; Continuous Dynamical Systems - B

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In this paper, we apply a newly developed generalized discontinuous Galerkin (GDG) method for rigorous simulations of 2-D phase shift masks (PSM). The main advantage of the GDG method is its accurate treatment of jumps in solutions using the Dirac δ generalized functions as source terms of partial differential equations. The scattering problem of the PSM is cast with a total field/scattering field formulation while the GDG method is used to handle the inhomogeneous jump conditions between the total and scattering fields along the physical and perfectly matched layer (PML) interfaces. Numerical results demonstrate the high order accuracy of the GDG method and its capability of handling the non-periodic structures such as optical images near mask edges.

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Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography

Erdmann

Shao

Evanschitzky

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Impact of polarization on an attenuated phase shift mask with ArF hyper-numerical aperture lithography

Cited by 6 publications

References 7 publications

32nm and below logic patterning using optimized illumination and double patterning

32nm and below logic patterning using optimized illumination and double patterning

Accurate simulations of 2-D phase shift masks with a generalized discontinuous Galerkin (GDG) method

Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography

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