will occur. Additionally, probing the DOS with high enough sensitivity to probe defect states is important, as these defect states often limit charge transport in semiconducting materials or serve as recombination centers in photovoltaics. [3,5,6] Recently, an electrochemical technique, energy-resolved electrochemical impedance spectroscopy (ER-EIS), was applied to measure the density of states of organic semiconductors (OSCs) with high sensitivity. [7][8][9][10][11] The detection of defect states using electrochemical methods is particularly relevant to understanding charge-carrier transport in organic electrochemical transistors (OECTs), which are of growing interest for neuromorphic computing, [12][13][14] biosensing, [15][16][17] and bioelectronics. [18][19][20] The IE and EA are typically measured using either photoemission spectroscopies, including ultraviolet and inverse photo emission spectroscopy (UPS and IPES, respectively), or extracted based on electrochemical methods, such as cyclic voltammetry, differential pulse voltammetry, or more recently ER-EIS. Here, we use IE and EA in place of the often-used highest occupied molecular orbital (HOMO) energy and lowest unoccupied molecular orbital (LUMO) energy, respectively, to be consistent with recommended terminology. [21] In photoemission spectroscopy, an electron is emitted into vacuum upon absorption of a photon with sufficient energy (UPS), and in inverse photoemission a photon is emitted upon acceptance Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energyresolved electrochemical impedance spectroscopy (ER-EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as subbandgap defect states in organic semiconductors. Herein, ER-EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER-EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER-EIS agree with sub-bandgap features detected by PDS. Surprisingly, ER-EIS measurements of regiorandom and regioregular poly(3-hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.