Impact of thin SrTiO3 seed layer to achieve low-temperature crystallization below 300°C and ferroelectricity of lead zirconate titanate thin film

Abstract

The authors report low-temperature preparation of Pb(Zr0.6,Ti0.4)O3 (PZT) thin films below 300°C using SrTiO3 seed layers on (111)Pt∕IrO2∕SiO2∕(001)Si substrates by metal-organic chemical vapor deposition. The critical parameters contributing low-temperature preparation for PZT were crystallinity and orientation of SrTiO3 seeds and deposition rate of PZT films. Using 1–2nm of SrTiO3 with (h00) and (hh0) mixed orientations, polycrystalline PZT films could be obtained at 290°C with deposition rate of 0.5–1.0nm∕min. The remanent polarization (2Pr) and coercive field (2Ec) of PZT films on SrTiO3 seeds with deposition rate of 0.5nm∕min were 42.4μC∕cm2 and 256kV∕cm, respectively.

Self-polarization induced by lattice mismatch and defect dipole alignment in (001) BaTiO3/LaNiO3 polycrystalline film prepared by magnetron sputtering at low temperature

“…However, high-temperature annealing (≥700°C) is regularly required to crystallize the pure BT ferroelectric thin films. Besides, it has been found that the crystallization temperature of ferroelectric films can be reduced by using buffer layer, because the crystallization nucleation of ferroelectric films is much easier on buffer layer than that on the Si or Pt substrate [14][15][16][17] . Besides, it has been found that the crystallization temperature of ferroelectric films can be reduced by using buffer layer, because the crystallization nucleation of ferroelectric films is much easier on buffer layer than that on the Si or Pt substrate [14][15][16][17] .…”

Effect of Annealing Temperature on the Properties of Ba0.67Sr0.33TiO3:Mn+Y Thin Films

“…Consideration of the XRD analysis results shown in Figure 1, it was believed that the improved crystallinity is related to reducing the leakage current density of BST films. Reduction in the leakage current has been found in PZT films when the films have good crystallinity [17]. In this figure, the sample annealed at 700 • C shows much better leakage current characteristics owing to its better microstructure.…”

Enhancement of Properties of Mn/Y Co-doped Ba0.67Sr0.33TiO3Films on Oxide Electrode by Inserting a SrTiO3Buffer Layer

“…SrTiO 3 (STO) is cubic perovskite structure with lattice parameter of 0.3905 nm, close to that of LNO and of BST. STO has been investigated as a buffer layer [7,9]. In these applications, one takes advantage of its compatible crystal structure with the dielectric material.…”