Impact on nonlinear/linear optical and structural parameters in quaternary In15Ag10S15Se60 thin films upon annealing at different temperatures

Influence of time dependent laser-irradiation for tuning the linear–nonlinear optical response of quaternary Ag10In15S15Se60 films for optoelectronic applications

“…25 In previous work, we have reported changes in various optical properties of In 15 Ag 10 S 15 Se 60 with the annealing temperature. 26 The main focus of the current investigation is to study the change in optical parameters of the In 15 Ag 10 S 15 Se 60 laser-irradiated thin lms at different time duration. X-ray diffraction (XRD) and Raman spectroscopy are carried out to check the lm's structural changes.…”

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

“…To understand the optical behavior of the film more thoroughly, it is necessary to obtain the high-frequency dielectric constant (ε L ) and carrier concentration ( N / m *). ε L , n , and λ are related by the equation where ε L is the high-frequency dielectric constant, e is the charge of an electron (1.6 × 10 –19 C), ε o is the vacuum permittivity (8.85 × 10 –12 F/m), c is the speed of the light, and N / m * is the ratio of the free carrier concentration to the effective mass. The plot of n 2 versus λ 2 gives the ε L value as the intercept (Figure b), and the values are listed in Table .…”

“…For this study, ω p decreases upon thermal annealing. As per Sellmeier’s classical dispersion model, in the lower-frequency region, the refractive index is expressed as , and upon rewriting, it becomes where s 0 and λ 0 are the oscillator strength and oscillator wavelength, respectively. The graph of ( n 2 – 1) −1 versus λ –2 is presented in Figure c.…”

“…Similarly, the transition from the amorphous to crystalline phase takes place in Ag 60– x Se 40 Te x thin films upon annealing at 100 °C . Parida et al discussed the annealing-induced increase in crystallite size and particle size and the optimization of the bandgap of an In 15 Ag 10 S 15 Se 60 thin film upon annealing . AgGaGe 5 Se 12 quaternary alloys show greater nonlinearity and are used for frequency conversions after annealing under a particular condition to eliminate specific absorption bands at 3.4 and 7 μm .…”

Annealing-induced phase transformation in In10Se70Te20 thin films and its structural, optical and morphological changes for optoelectronic applications

“…This causes an increase in lattice perfection and lattice growth. 63,64 This causes changes in the optical properties by improving the transmittance and shiing the absorption edges. The blue shiing in the absorption edge reduced the absorption coefficient, representing light absorption through the material medium.…”