Impact study of the process thermal budget of advanced CMOS nodes on SiGe HBT performance

Vu, V.T.; Rosenbaum, Tommy; Saxod, O.; Céli, D.; Zimmer, Thomas; Fregonèse, Sébastien; Chevalier, P.

doi:10.1109/bctm.2015.7340558

Cited by 5 publications

(1 citation statement)

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“…The vertical profile presented in Fig. 2 comes from the "approach 2" study presented in [10], where the recipes used in 55-nm BiCMOS (B55) [5] are tuned to account for the process thermal budget reduction in 28-nm FD-SOI. This profile is therefore not expected to be fully optimized for the best performance in C28FD.…”

Section: Fabrication Process and Vertical Profilesmentioning

confidence: 99%

Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS

Céli

Zimmer

et al. 2016

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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This paper presents a novel Fully Self-Aligned (FSA) in [9]). In order to achieve this goal, the architecture is fIrstly Si/SiGe HBT architecture using Selective Epitaxial Growth evaluated and optimized by TCAD simulation before (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from launching the fabrication process trials.the Collector (EXBIC). The one is integrated into the bulk area of the 28-nm FD-SOI CMOS technology developed atThe fIrst part of the paper presents the fabrication process STMicroelectronics. All the parameters of the architecture such flow and the key features of the EXBIC architecture. In the as the boron-doped base link, the emitter width and height, the second part, electrical performances of this architecture pedestal oxide and sidewall thicknesses are evaluated by TCAD integrated into the bulk area part (called "NO SO" for No SOl) simulation. A low base-collector capacitance, independent from of the C28FD are systematically evaluated by TCAD the extrinsic base doping is obtained. Optimized architecture simulations. All the technological parameters of the exhibits 420 GHZ/T and 780 GHZ/MAX. architecture such as the boron in-situ doped base link, the emitter width and height, the pedestal oxide and sidewall Keywords-BiCMOS, SiGe HBT, FD-SOl, TCAD, thicknesses are thoroughly investigated. The results are architecture, thermal budget, vertical profile.discussed in the last section, where we also draw the conclusion I.

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Section: Fabrication Process and Vertical Profilesmentioning

confidence: 99%