Improved breakdown strength and energy density of Al2O3/nano-ZrO2 composite films via enhanced interfacial repairing behavior

Li, Mengxin; Yao, Manwen; Su, Zhen; Gao, Wenbin; Yao, Xi

doi:10.1016/j.ceramint.2018.08.202

Cited by 9 publications

(5 citation statements)

References 39 publications

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“…The high thickness of Al 2 O 3 -rich Al 2 O 3 –ZrO 2 upper layer seems to be a key to achieving the high E b as the 10 MV cm −1 value is a theoretical maximum for Al 2 O 3 [ 67 ]. The E b value achieved in the present work surpasses the values reported for Al 2 O 3 –ZrO 2 mixed oxides synthesized via other methods [ 57 , 68 ]. Moreover, E b of the Al 2 O 3 –ZrO 2 mixed-oxide films prepared via the PAA-assisted anodizing exceeds the values for one-component Al 2 O 3 films (4–7 MV cm −1 ) prepared by ALD and ZrO 2 films (2–4 MV cm −1 ) prepared by ALD or sol-gel deposition [ 69–73 ].…”

Section: Resultscontrasting

confidence: 60%

“…The technology developed in this study is advantageous for forming dielectric films with highly competitive energy density. The U value achieved here surpasses the energy density of Al 2 O 3 –ZrO 2 mixtures or nanolaminates (~10–40 J cm −3 ), pure Al 2 O 3 (~5–20 J cm −3 ), and pure ZrO 2 (~20 J cm −3 ) reported elsewhere [ 57 , 68 , 74 , 75 ].…”

Section: Resultscontrasting

confidence: 37%

“…This feature can potentially result in an increased energy dissipation over the grain boundaries alongside a rise in dielectric losses at higher frequencies as the films thicken. However, the low- and middle-frequency losses achieved for the planar Al 2 O 3 –ZrO 2 nanocomposite dielectrics appear to be almost two orders of magnitude lower than in the Al 2 O 3 –ZrO 2 mixed-oxide layers prepared by other methods [ 57 ]. Moreover, the losses achieved here are one to two orders of magnitude lower than in one-component Al 2 O 3 and ZrO 2 films deposited by ALD [ 58 , 59 ].…”

Section: Resultsmentioning

confidence: 99%

“…The Al 2 O 3 –ZrO 2 anodic-oxide capacitor assembled in this work revealed a 2 nA cm −2 J at 2.0 MV·cm −1 , which is lower than leakage currents reported in single-component MIM devices based on ALD-deposited Al 2 O 3 (~100 nA·cm −2 ) and ZrO 2 (~1 μA·cm −2 ) layers measured at a similar field [ 78 , 79 ]. Further, the leakage current in our capacitor is lower than in capacitors based on sol-gel deposited Al 2 O 3 –ZrO 2 nanocomposites (~1 μA·cm −2 at 2.0 MV·cm −1 ) [ 57 ].

Figure 6.…”

Section: Resultsmentioning

confidence: 99%

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The planar anodic Al ₂ O ₃ -ZrO ₂ nanocomposite capacitor dielectrics for advanced passive device integration

Kamnev

Pytlíček

Bendová

et al. 2023

Science and Technology of Advanced Materials

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The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO 2 nanorods self-embedded into the nanoporous Al 2 O 3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95–480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF·cm −2 , the loss tangent of 4·10 −3 at frequencies up to 1 MHz, the leakage current density of 40 pA·cm −2 , the breakdown field strength of up to 10 MV·cm −1 , the energy density of 100 J·cm −3 , the quadratic voltage coefficient of capacitance of 4 ppm·V −2 , and the temperature coefficient of capacitance of 480 ppm·K −1 at 293–423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors’ characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.

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Section: Resultscontrasting

confidence: 60%

Section: Resultscontrasting

confidence: 37%

Section: Resultsmentioning

confidence: 99%

Figure 6.…”

Section: Resultsmentioning

confidence: 99%

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The planar anodic Al ₂ O ₃ -ZrO ₂ nanocomposite capacitor dielectrics for advanced passive device integration

Kamnev

Pytlíček

Bendová

et al. 2023

Science and Technology of Advanced Materials

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“…Although many articles have reported dielectric composites with metal oxides, there are still limited publications on 2D metal oxides. Sheng et al successfully exfoliated a ZrO 2 nanosheet from ZrClO 2 •8H 2 O powders through a simplified process and fabricated PVDF/ZrO 2 nanocomposites [176]. The reduced leakage current and increased Young's modulus of the composites achieved a much improved energy density of 11.03 J/cm 3 at a breakdown strength of 519 MV/m.…”

Section: Metal Oxidesmentioning

confidence: 99%

Energy Storage Performance of Polymer-Based Dielectric Composites with Two-Dimensional Fillers

You,

Liu,

Hua

et al. 2023

Nanomaterials

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Dielectric capacitors have garnered significant attention in recent decades for their wide range of uses in contemporary electronic and electrical power systems. The integration of a high breakdown field polymer matrix with various types of fillers in dielectric polymer nanocomposites has attracted significant attention from both academic and commercial sectors. The energy storage performance is influenced by various essential factors, such as the choice of the polymer matrix, the filler type, the filler morphologies, the interfacial engineering, and the composite structure. However, their application is limited by their large amount of filler content, low energy densities, and low-temperature tolerance. Very recently, the utilization of two-dimensional (2D) materials has become prevalent across several disciplines due to their exceptional thermal, electrical, and mechanical characteristics. Compared with zero-dimensional (0D) and one-dimensional (1D) fillers, two-dimensional fillers are more effective in enhancing the dielectric and energy storage properties of polymer-based composites. The present review provides a comprehensive overview of 2D filler-based composites, encompassing a wide range of materials such as ceramics, metal oxides, carbon compounds, MXenes, clays, boron nitride, and others. In a general sense, the incorporation of 2D fillers into polymer nanocomposite dielectrics can result in a significant enhancement in the energy storage capability, even at low filler concentrations. The current challenges and future perspectives are also discussed.

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Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Liu

Xue

Wang

et al. 2021

Adv Elect Materials

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A bifunctional device capable of simultaneously achieving dielectric energy storage and resistive switching is first designed and fabricated based on a conventional metal–insulator–metal (MIM) structure. Typically, Al/TaOx/Pt structure shows a high breakdown strength up to 5.07 MV cm−1 and a relatively high‐energy density of 27.6 J cm−3. Meanwhile, the leakage current of the MIM structure is at the sub‐nanoampere level and exhibits the typical characteristic of analog switching under an applied voltage of about 12 volts. The energy density and the switching current in the developed integrated MIM structure are comparable to the corresponding performances in discrete binary oxides capacitors with linear dielectric and oxide‐based memristors, respectively. Furthermore, synaptic functions with short‐term and long‐term plasticities can be realized. Both of the device properties are found to be correlated to the role of the AlOx interfacial layer between the Al electrode and the dielectric layer, which provides the possibility of coupling between these two functions coexisting in the MIM structure. The prototypical bifunctional device offers a great prospect for multifunctional energy and neuromorphic applications.

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Improved breakdown strength and energy density of Al2O3/nano-ZrO2 composite films via enhanced interfacial repairing behavior

Cited by 9 publications

References 39 publications

The planar anodic Al ₂ O ₃ -ZrO ₂ nanocomposite capacitor dielectrics for advanced passive device integration

The planar anodic Al ₂ O ₃ -ZrO ₂ nanocomposite capacitor dielectrics for advanced passive device integration

Energy Storage Performance of Polymer-Based Dielectric Composites with Two-Dimensional Fillers

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

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Improved breakdown strength and energy density of Al2O3/nano-ZrO2 composite films via enhanced interfacial repairing behavior

Cited by 9 publications

References 39 publications

The planar anodic Al 2 O 3 -ZrO 2 nanocomposite capacitor dielectrics for advanced passive device integration

The planar anodic Al 2 O 3 -ZrO 2 nanocomposite capacitor dielectrics for advanced passive device integration

Energy Storage Performance of Polymer-Based Dielectric Composites with Two-Dimensional Fillers

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

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Product

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The planar anodic Al ₂ O ₃ -ZrO ₂ nanocomposite capacitor dielectrics for advanced passive device integration

The planar anodic Al ₂ O ₃ -ZrO ₂ nanocomposite capacitor dielectrics for advanced passive device integration