Improved gain characteristics in high-concentration Er/sup 3+//Yb/sup 3+/ codoped glass waveguide amplifiers

Pasquale, F. Di; Federighi, M.

doi:10.1109/3.309873

Cited by 73 publications

(24 citation statements)

References 6 publications

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“…Moreover, the presence of Yb decreases tendency of Er ions for clustering. For those reasons one can expect a high gain efficiency in Yb/Er-doped waveguides [17,18]. This is confirmed by the recent demonstrations of high-performance laser [19], amplifier [20] and an amplifying four-wavelength combiner [21].…”

supporting

confidence: 55%

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Jaskorzyńska

1999

Acta Phys. Pol. A

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This paper discusses Er-doped optical waveguides implemented in glass materials. The emphasis is put on physical limitations posed by concentration dependent nonlinear effects and on methods for their characterization. Examples of recently demonstrated, best performance integrated active devices are also given.PACS numbers: 42.65.-k Optical fibers and planar waveguides can be made active, i.e. exhibit amplification, by inserting rare-earth ions in their core. Most of the related research has been focused on fibers and planar waveguides doped with erbium (Er) because . they provide gain at the 1.5 µm band, which is of particular interest for telecommunication applications. For pumping Er ions one typically uses laser diodes at 980 nm or 1.48 µm, as it is illustrated in Fig. 1.Planar active waveguides are considered to be an attractive option for realizing integrated optical devices with gain [1,2]. A prerequisite for realizing practical active devices is that a sufficiently large gain can be obtained at reasonable pumping powers. While this can easily be achieved in a few meter long active fibers, their planar counterparts tend to suffer from low gain efficiencies. Apart from much higher losses, the main difficulty is that a usable gain must be accumulated over a much shorter (a few centimeters) length. This. typically requires two orders of magnitude higher Era+ concentrations, at which parasitic energy transfer between excited Er-ions reduces the gain [3][4][5][6][7][8][9][10]. The mechanism of the parasitic effect is illustrated in Fig. 2. The excitation energy (1) is transferred (2) from one excited ion (donor) to the other (acceptor), which typically occurs via electric dipole-dipole interaction. Consequently the donor relaxes (2) to the ground state while the acceptor is upconverted to the 4I9/2 state (2). This is usually followed by two fast, non-radiative relaxation processes (3,4a) down to the metastable level 4 l13/2. However, a small fraction of the ions relaxes to the ground level (4b) emit-. ting photons at 980 nm. As a result only one of the two pump photons absorbed by the Er ions can be used for amplification at 1.5 µm. The energy of the other

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confidence: 55%

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Jaskorzyńska

1999

Acta Phys. Pol. A

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“…EDWA and Yb-co-doped EDWA performance has been investigated theoretically in a number of hosts [43,58,75,[205][206][207][208][209][210]. Such theoretical simulations are applied, for example, to select the optimum input pump power and wavelength, waveguide cross section and length, and Er concentration for a given input signal power and wavelength.…”

Section: Gain Optimizationmentioning

confidence: 99%

“…D. B. Bradley and M. Pollnau: Erbium-doped integrated waveguide amplifiers and lasers rate due to both, a relatively high Yb concentration and absorption cross-section combined with efficient Yb-Er energy transfer, reduces performance degradation due to Er ion-ion interactions (ETU) [43,205]. The effect becomes particularly important as the Er concentration is increased and the ETU rate increases.…”

Section: Laser and Photonics Reviewsmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

325

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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“…Furthermore, the energy absorbed by Yb 3+ can be efficiently transferred to Er 3+ in phosphate glasses (Hwang et al 2000). Numerical research indicates that the energy transfer from Yb 3+ to Er 3+ can reduce the adverse effects caused by the concentration quenching due to extremely high Er 3+ concentration (Di Pasquale and Federighi 1994). Er 3+ /Yb 3+ co-doped phosphate glass becomes more and more popular in fabricating short length amplifiers.…”

Section: Introductionmentioning

confidence: 98%

“…In these amplifiers, a concentration of erbium exceeding 10 26 ions/m 3 is needed. Unfortunately, such a high concentration may cause concentration quenching resulting from ion-ion interactions by cooperative up-conversion and cross-relaxation (Di Pasquale and Federighi 1994;Blixt et al 1991), which reduces the pump efficiency. These negative effects can be minimized by choosing suitable glass host.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation of gain characteristics of Er3+/Yb3+ co-doped fiber amplifiers

et al. 2008

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In this work, a model for analyzing the gain characteristics of heavily Er 3+ /Yb 3+ co-doped compact fiber amplifier is presented. Four-level rate equations and finite-difference beam propagation method are applied to simulate the optical field evolution along the active fiber. Based on this model, the influences of ion concentration, fiber length and pump power on the gain characteristics of Er 3+ /Yb 3+ co-doped phosphate glass fiber amplifiers are theoretically investigated. Numerical results show that for a fiber length of 3.6 cm the internal gain can reach 27.2 dB with N Er = 2.6 × 10 26 ions/m 3 and N Yb = 1.2 × 10 27 ions/m 3 when pumped with 224 mW at 980 nm. The gain per centimeter is 7.56 dB/cm. The results can provide useful information to optimize the gain performance of these compact fiber amplifiers.Keywords Er 3+ /Yb 3+ co-doped fiber amplifiers · Helmholtz equation · Rate equations · Finite-difference beam propagation method (FD-BPM)

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Improved gain characteristics in high-concentration Er/sup 3+//Yb/sup 3+/ codoped glass waveguide amplifiers

Cited by 73 publications

References 6 publications

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Two-Particle Parasitic Effects in Rare-Earth Doped Waveguides

Erbium‐doped integrated waveguide amplifiers and lasers

Numerical investigation of gain characteristics of Er3+/Yb3+ co-doped fiber amplifiers

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