Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector

Chang, Yu-Chih; Liou, Jian-Kai; Liu, Wen‐Chau

doi:10.1109/led.2013.2255020

Cited by 30 publications

(15 citation statements)

References 13 publications

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“…Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition solid-state lighting [6], [7]. Due to the difference in refractive indices between GaN and air, light extraction efficiency (LEE) is limited by total internal reflection [8].…”

Section: Study Of Gan-based Leds With Hybrid Siomentioning

confidence: 99%

Study of GaN-Based LEDs With Hybrid SiO₂ Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Hsu

Chan

Chen

et al. 2017

IEEE Trans. Electron Devices

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A hybrid SiO 2 micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface of hybrid SiO 2 microsphere/nanosphere antireflection coating, the scattering effect could be increased. Thus, the light extraction efficiency could be further enhanced. As compared with a conventional LED (device A), at 20 mA, the studied device C exhibits 18.7% enhancement in light output power without any degradation of electrical properties. Reduced leakage current could also be achieved. Therefore, the use of hybrid SiO 2 microsphere/nanosphere antireflection coating could effectively improve the performance of GaN-based LEDs.

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Section: Study Of Gan-based Leds With Hybrid Siomentioning

confidence: 99%

Study of GaN-Based LEDs With Hybrid SiO₂ Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Hsu

Chan

Chen

et al. 2017

IEEE Trans. Electron Devices

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“…4(a) and 4(b). This 100 ± 5 nm SiO 2 nanosphere monolayer exhibits a pseudo-hexagonal close packing arrangement [18]. In addition, the mean diameter and depth of nanopores on the AAO thin film are 60 ± 3 and 770 ± 10 nm, respectively.…”

Section: B Steady-state Of Pore Growthmentioning

confidence: 90%

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Liou

Chen

Chou

et al. 2014

IEEE J. Quantum Electron.

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A GaN-based light-emitting diode (LED) grown on a nanocomb-shaped patterned sapphire substrate (PSS) is fabricated and studied. Nanocomb-shaped patterns are transferred on a sapphire substrate using a well-ordered anodized aluminum oxide (AAO) thin film as a mask for the inductively coupled plasma etching process. This well-ordered AAO thin film with a high aspect ratio is grown on a sapphire substrate by an oxalic acid-based electrochemical system and a threestep anodization. The strain state generated during epitaxial growth could be effectively alleviated by the use of nanocombshaped PSS. The treading dislocation density could be reduced. Thus, the enhanced crystalline quality is obtained. In addition, due to the presence of photonic crystal-like air buffer layer, part of reflected photons upward the top side could be scattered by this layer. Therefore, more photons could be extracted outside. Experimentally, at 20 mA, as compared with a conventional LED grown on a planar sapphire substrate, the studied LED grown on a nanocomb-shaped PSS shows 53.8% and 43.7% enhancements in light output power and external quantum efficiency as well as a reduced leakage current.

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“…Both concave and convex Ag reflectors were found to enhance the LOP of GaN LEDs by as much as 29%–33%. Chang et al reported the fabrication of a 3D‐PhC structure backside reflector by inserting a self‐assembled silica MCC between the hybrid (a distributed Bragg reflector + a metal mirror) reflector and backside of the sapphire substrate. Due to the presence of a gap between silica nanospheres, air voids are formed after the deposition of the backside reflector.…”

Section: Nanostructures Derived From MCC and Their Applications In Ledsmentioning

confidence: 99%

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

Geng

Wei

Wang

et al. 2014

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One of the major challenges for the application of GaN-based light emitting diodes (LEDs) in solid-state lighting lies in the low light output power (LOP). Embedding nanostructures in LEDs has attracted considerable interest because they may improve the LOP of GaN-based LEDs efficiently. Recent advances in nanostructures derived from monolayer colloidal crystal (MCC) have made remarkable progress in enhancing the performance of GaN-based LEDs. In this review, the current state of the art in this field is highlighted with an emphasis on the fabrication of ordered nanostructures using large-area, high-quality MCCs and their demonstrated applications in enhancement of LOP from GaN-based LEDs. We describe the remarkable achievements that have improved the internal quantum efficiency, the light extraction efficiency, or both from LEDs by taking advantages of diverse functions that the nanostructures provided. Finally, a perspective on the future development of enhancement of LOP by using the nanostructures derived from MCC is presented.

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Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector

Cited by 30 publications

References 13 publications

Study of GaN-Based LEDs With Hybrid SiO₂ Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Study of GaN-Based LEDs With Hybrid SiO₂ Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

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Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector

Cited by 30 publications

References 13 publications

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

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Product

Resources

About

Study of GaN-Based LEDs With Hybrid SiO₂ Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Study of GaN-Based LEDs With Hybrid SiO₂ Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition