Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

Hsu, Chia-Hao; Shih, Wen-Chung; Lin, Yueh Chin; Hsu, Heng‐Tung; Hsu, Hisang Hua; Huang, Yu; Lin, T.W.; Wu, Chia Hsun; Wu, Wen; Maa, Jer‐Shen; Kakushima, Kuniyuki; Chang, Edward Yi

doi:10.7567/jjap.55.04eg04

Cited by 18 publications

(9 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, a lower IM3 level can be achieved by increasing the flatness of the G m distribution across the gate-bias region. 5,9 As shown in Fig. 4, the dual-gate device has a flatter G m curve, which leads to small absolute G m over a wide range of gate-source voltage shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…It indicates that the flatter transconductance profile results in a lower IM3 levels and a higher third order intercept point (IP3), and thus improves the device linearity. Several methods have been reported in the past to improve the linearity of the GaN HEMTs, including optimizing epitaxial structure 6,7 and utilizing ALD-Al 2 O 3 8 or nanolaminate La 2 O 3 /SiO 2 9 or ferroelectric material of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) 10 as gate dielectric.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication

Wang

Lee

et al. 2017

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

An effective method of improving the linearity of AlGaN/GaN HEMTs by using dual-gate technology is demonstrated. In this letter, we compare the DC characteristics and device linearity of the dual-gate AlGaN/GaN HEMTs with conventional single-gate AlGaN/GaN HEMTs. The correlation between the extrinsic transconductance (G m ) with third-order intermodulation distortion (IM3) and third order intercept point (IP3) suggests that the broader G m distribution as a function of gate-bias, causes a lower IM3 level and higher IP3 values for the device. The improved device linearity demonstrates that dual-gate AlGaN/GaN HEMT design is a good approach for high-linearity RF device applications. AlGaN/GaN based high-electron mobility transistors (HEMTs) have been widely studied for microwave power applications, such as wireless base station and satellite communication owing to the high power handling capability at high frequencies for GaN devices. [1][2][3][4] In modern wireless communication systems, multichannel transmissions are extensively used for signal transmission. During signal transmission, there are many operating frequencies and the neighboring frequencies are located closely to each other, hence the device used in this system will produce the intermodulation distortion and lead to the degradation of the system signal-to-noise ratio (SNR). Among all intermodulation distortions, third-order intermodulation distortion (IM3) dominates the linearity performance of the devices. Hence, IM3 performance is one of the most important criteria for evaluating device performance used in wireless communication systems.Recently, improvement of linearity from the device level is attracting lots of attention. A nonlinearity transfer-function-based analysis method was used for the evaluation of device linearity. 5 In order to reduce IM3, the transconductance needs to remain constant during a wide operating range of the gate bias. It indicates that the flatter transconductance profile results in a lower IM3 levels and a higher third order intercept point (IP3), and thus improves the device linearity. Several methods have been reported in the past to improve the linearity of the GaN HEMTs, including optimizing epitaxial structure 6,7 and utilizing ALD-Al 2 O 3 8 or nanolaminate La 2 O 3 /SiO 2 9 or ferroelectric material of Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) 10 as gate dielectric. In addition, there have been several reports of monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) using GaN dual-gate HEMT devices because the two gates allow higher bias operation and increase the transistor output impedance. Moreover, the dual-gate transistors also exhibit smaller feedback capacitance compared to a single-gate transistor.11,12 Furthermore, the dual-gate configuration can be fabricated at the same time as the single-gate configuration using the same process. However, to our best knowledge, there are very few reports on linearity characteristics of dual-gate GaN HEMTs. In this letter, the DC measurements and linearity test ...

show abstract

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication

Wang

Lee

et al. 2017

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Also, AlGaN/GaNbased MOSHEMT is more suitable for high power and high-frequency electronic device applications than conventional HEMT-based devices due to their low gate capacitance and low gate leakage current. Today, Al 2 O 3 [9], [10], HfO 2 [11], [12], SiO 2 [13], [14], Si 3 N 4 [14], or La 2 O 3 [13], [14] materials are commonly used as the gate dielectric for AlGaN/GaN MOSHEMTs. AlGaN/GaN HEMT and MOSHEMTbased devices suffer from high contact and high ON-resistance because of metallic ohmic contacts and substantial source-to-drain distance.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

View full text Add to dashboard Cite

In this paper we have developed an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cut-off frequency(f T ) model equations are generated and simulated with MATLAB tool. It is also observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can also improve the device performance. The proposed Ferro PZT MOSHEMT model accurately produces a higher drain current of 1.14A/mm , a high transconductance of 362S/mm, the gate-to-source capacitance of 50.99pF, the gate-to-drain capacitance of 38.25pF, and high cut-off frequency of 0.033THz for 20nm AlGaN barrier layer. The proposed model results show good agreement with the TCAD-Atlas simulation results and were satisfactory for the different AlGaN barrier layer thickness. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.

show abstract

“…The motivation behind the use of silicon dioxide has been the fabrication of stable and high-performance MOS devices and integrated circuits. The silicon dioxide that has an electrically isolated transistor gate from the silicon channel is a key material for the digital revolution with today's GHz microprocessors [1].…”

Section: Introductionmentioning

confidence: 99%

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

et al. 2020

View full text Add to dashboard Cite

This paper focuses on researching the change in the volt-farad characteristic of the Al/SiO2/n-Si structure irradiated by helium ions with the energy of 5 MeV in different frequencies of 1 kHz; 10 kHz; 100 kHz and 1 MHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured by LCR Agilent E4980A and Agilent 4285A meter. The complex electrical module’s hodograph of irradiated structure shows that there is a formation of quasi-continuous radiation-disturbed layer at fluence 1012 cm-2 with U < -7 V and at 1013 cm-2 with U < -20 V, which enhances the speed of charged particles, thereby increasing the reverse current in the irradiated structure.

show abstract

Improved linearity and reliability in GaN metal–oxide–semiconductor high-electron-mobility transistors using nanolaminate La₂O₃/SiO₂ gate dielectric

Cited by 18 publications

References 28 publications

Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication

Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

Contact Info

Product

Resources

About