Improvement in linewidth roughness by postprocessing

Chandhok, Manish; Frasure, Kent; Putna, E. Steve; Younkin, Todd R.; Rachmady, W.; Shah, Uday; Yueh, Wang

doi:10.1116/1.3013860

Cited by 41 publications

(37 citation statements)

References 12 publications

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“…16) In the search for possible solutions, a trend on the optimization of presently available conventional resist processes has been observed. [8][9][10]17,[95][96][97][98][99] Understanding the sufficiency of present processes and possibly the need for the development of new or alternative processes will be especially important in moving forward to extremely stringent targets required for next-generation semiconductors. 16) Here, we review the development and present status of various alternative resist processes that are proposed for improving LWR/LER.…”

Section: Resist Processingmentioning

confidence: 99%

“…To break the RLS trade-off relationship, a number of groups 8,9,17,98) over the past few years have started and continue investigations on and search for alternatives in the presently available resist processes. Figure 8 shows the various EUV resist process steps discussed in this paper.…”

Section: Alternative Resist Processesmentioning

confidence: 99%

“…[126][127][128] Another factor considered is how these processes affect specific roughness frequencies, as determined by power spectral density (PSD) analysis. 17,129) This methodology has been applied as it has been shown that the total reduction in 3 LWR does not give a complete picture of the effects of the various smoothing techniques. PSD analysis gives additional information that is crucial for appreciating the benefits and drawbacks of LWR reduction techniques.…”

Section: Post-process Technologiesmentioning

confidence: 99%

“…PSD analysis gives additional information that is crucial for appreciating the benefits and drawbacks of LWR reduction techniques. 17) In these post-processes, thermal smoothing through the manipulation of resist reflow temperatures, chemical smoothing with the application of solvents, or a combination of both is used in obtaining optimal LWR/LER. One example of the thermal smoothing process is the FL-based postbake (FL PB) process.…”

Section: Post-process Technologiesmentioning

confidence: 99%

“…In particular, the effect and possible solutions to the trade-off relationship between EUV resist targets, namely, resolution, LWR/LER, and sensitivity, which have been constant topics in EUVL, [8][9][10]14,17) are described and reviewed. Recent works on resist materials focusing on conventional and nonconventional chemical platforms 1,4,5,[11][12][13]18,19) are also discussed.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Resist Materials and Processes for Extreme Ultraviolet Lithography

Itani¹,

Kozawa

2012

Jpn. J. Appl. Phys.

166

153

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Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography. The development of EUV lithography has been pursued on a worldwide scale. Over the past decade, the development of EUV lithography has significantly progressed and approached its realization. In this paper, the resist materials and processes among the key technologies of EUV lithography are reviewed. Owing to its intensive development, the resist technology has already closely approached the requirements for the 22 nm node. The focus of the development has shifted to the 16 nm node and beyond. Despite the trade-off relationships among resolution, line edge roughness/line width roughness, and sensitivity, the capability of resist technology will go beyond the 16 nm node.

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