Improvement in the Electrical Properties in <i>n</i>-ZTO/<i>p</i>-SiC Heterojunction Structures via Post-Annealing

Park, Sung‐Joon; Jeong, Young-Seok; Koo, Sang‐Mo

doi:10.1166/jnn.2017.14736

j nanosci nanotechnol

2017

DOI: 10.1166/jnn.2017.14736

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Improvement in the Electrical Properties in n-ZTO/p-SiC Heterojunction Structures via Post-Annealing

Sung‐Joon Park

Young-Seok Jeong

Sang‐Mo Koo

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Improvement in the Electrical Properties in n-ZTO/p-SiC Heterojunction Structures via Post-Annealing

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