2024
DOI: 10.1039/d3tc04605b
|View full text |Cite
|
Sign up to set email alerts
|

Improving electron mobility in MoS2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Zhaofang Cheng,
Shaodan He,
Xiaona Han
et al.

Abstract: The microscale structural phase transition in TMDs from 2H to 1T or 1T' phases offer a distinct approach for modulating the electronic properties of these materials. Although phase engineering for...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2025
2025
2025
2025

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 55 publications
(65 reference statements)
0
0
0
Order By: Relevance