Improving organic light-emitting diode performance with patterned structures

Fina, Michael; Liu, Deang; Ren, Li; Mao, Samuel S.

doi:10.1007/s00339-011-6616-5

Cited by 13 publications

(5 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…V C 2014 AIP Publishing LLC 115, 233703-1 luminance intensity and current efficiency, when compared with pressure-free diodes. This result was later confirmed by Fina et al 11 Other researchers 12,13 have also reported improvements on the current density, photoluminescence, and electroluminescence, when pressure is applied to the OLEDs. Kim and Forrest 14 found that the pressures required to fabricate OLEDs could be 1000 times smaller when flexible polydimethylsiloxane (PDMS) stamps are used in cold welding processes instead of rigid silicon stamps.…”

Section: Introductionsupporting

confidence: 55%

“…Furthermore, they have good optical transparency in the visible range, moderate conductivity, and low thermal evaporation temperature. 9 A number of researchers [10][11][12][13][14][15][16] have studied the effects of pressure on the fabrication and performance of organic electronic devices. Kim et al 10 observed that OLEDs fabricated after pressure treatment exhibited a notable increase in FIG.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Pressure-assisted fabrication of organic light emitting diodes with MoO3 hole-injection layer materials

Anye

Vodah

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

MPa were applied to organic light emitting diodes containing either evaporated molybdenum trioxide (MoO 3) or spin-coated poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulphonate) (PEDOT:PSS) hole-injection layers (HILs). The threshold voltages for both devices were reduced by about half, after the application of pressure. Furthermore, in an effort to understand the effects of pressure treatment, finite element simulations were used to study the evolution of surface contact between the HIL and emissive layer (EML) under pressure. The blister area due to interfacial impurities was also calculated. This was shown to reduce by about half, when the applied pressures were between $5 and 8 MPa. The finite element simulations used Young's modulus measurements of MoO 3 that were measured using the nanoindentation technique. They also incorporated measurements of the adhesion energy between the HIL and EML (measured by force microscopy during atomic force microscopy). Within a fracture mechanics framework, the implications of the results are then discussed for the pressure-assisted fabrication of robust organic electronic devices. V

show abstract

Section: Introductionsupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Pressure-assisted fabrication of organic light emitting diodes with MoO3 hole-injection layer materials

Anye

Vodah

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Therefore, regulating the optical path of the device has been considered a remarkable approach to increase the efficiency of photon extraction, specifically for decreasing the effects of the substrate and waveguide modes. [ 97,98 ] The effect of the SPP mode can be weakened by the structural design of the interface, such as diffraction grating, as shown in Figure 3g. The light loss nature of the SPP mode is majorly due to the larger momentum of SPPs than free space photons.…”

Section: Fundamentals Of Peledsmentioning

confidence: 99%

Electroluminescence Principle and Performance Improvement of Metal Halide Perovskite Light‐Emitting Diodes

Liu

Guo

et al. 2021

Advanced Optical Materials

View full text Add to dashboard Cite

Metal halide perovskites have attracted considerable interest for their potential applications in high‐definition displays owing to their narrowband emission, wide color gamut (≈140%), near‐unity photoluminescence efficiency, and cost‐effective solution processability. Extensive efforts have led to the external quantum efficiency of state‐of‐the‐art perovskite light‐emitting diodes (PeLEDs) to exceed 20%. However, there are several obstacles, such as poor working stability, low efficiency, and low luminance, of pure‐blue and pure‐red light‐emitting devices that delay their commercial application. Addressing these issues requires a deep understanding of the photoluminescence effect as well as the bottlenecks in the process. Here, the fundamental working principle, carrier recombination, and light outcoupling properties of PeLEDs are described. The performance improvement strategies of PeLEDs based on defect engineering, perovskite crystallization, charge injection balancing, and quantum confinement are discussed. Furthermore, the challenges of PeLEDs in pure‐color light emission, working stability, and toxicity are reviewed and discussed.

show abstract

“…In the horizontal OFET configuration, charges are transported in the plane of the film, with crystalline lamellae mainly parallel to the substrate (edge‐on, Figure b). However, some applications (OPVs, OLEDs, vertical OFETs ) require charge transport in the vertical direction (normal to the plane of the film). For these, vertical orientation of either the π stacking (face‐on), or of the chain backbone (chain‐on, Figure b), the latter being the fastest charge transport route, is needed to efficiently direct charges in the out‐of‐plane direction.…”

Section: Mobility Values Of the Micropatterned P3ht Film Measured By mentioning

confidence: 99%

Ultrahigh Mobility in an Organic Semiconductor by Vertical Chain Alignment

et al. 2016

View full text Add to dashboard Cite

A method to produce highly efficient and long-range vertical charge transport is demonstrated in an undoped polythiophene thin film, with average mobilities above 3.1 cm(2) V(-1) s(-1) . These record high mobilities are achieved by controlled orientation of the polymer crystallites enabling the most efficient and fastest charge transport along the chain backbones and across multiple chains. The significant increase in mobility shown here may present a new route to producing faster and more efficient optoelectronic devices based on organic materials.

show abstract

Improving organic light-emitting diode performance with patterned structures

Cited by 13 publications

References 17 publications

Pressure-assisted fabrication of organic light emitting diodes with MoO3 hole-injection layer materials

Pressure-assisted fabrication of organic light emitting diodes with MoO3 hole-injection layer materials

Electroluminescence Principle and Performance Improvement of Metal Halide Perovskite Light‐Emitting Diodes

Ultrahigh Mobility in an Organic Semiconductor by Vertical Chain Alignment

Contact Info

Product

Resources

About