Improving the reliability of power LEDs with diamond boards

Kyatam, Shusmitha; Rodrigues, Luís; Maslovski, Stanislav I.; Alves, Luís Nero; Mendes, Joana Catarina

doi:10.1016/j.diamond.2022.109144

Cited by 6 publications

(1 citation statement)

References 21 publications

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“…In recent years, UV light-emitting diodes (LEDs) have gained significant attention because of their wide ranging potential applications [1][2][3][4][5]. Most of the applications of UV LEDs, such as UV curing, require a high output power, and the size of the UV LED chip is consequently designed to be larger in order to operate at a higher input power [6][7][8]. An increase in input power is accompanied by appreciable heat generation as ca.…”

Section: Introductionmentioning

confidence: 99%

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

Sun,

Dong,

Luo

et al. 2024

Nanomaterials

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In this study, we have fabricated a 368 nm LED with an epitaxial Indium Tin Oxide (ITO) contact layer. We analyze the thermal performance of the flip-chip LED with a symmetric electrode and metal reflective layer, applying ANSYS to build a coupled electro-thermal finite element model (FEM) of the temperature distribution in the multiple quantum wells (MQWs). We compare our system with the traditional Au-bump flip-chip LED and a flip-chip LED with a Distributed Bragg Reflector (DBR) layer. The simulation results have shown that the flip-chip LED with a metal reflective layer and symmetric electrode exhibits better heat dissipation performance, particularly at high input power. The influence of the insulating layer on the LED chip junction temperature is also examined. The simulation data establish an effect due to the thermal conductivity of the insulating layer in terms of heat dissipation, but this effect is negligible at an insulation layer thickness ≤1 µm.

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