2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- And Nanosystem Technologies 2009
DOI: 10.1109/internano.2009.5335637
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Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier

A. K. Shestakov
1
,
К. С. Журавлев
2
,
Vadim S. Arykov
3
et al.
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Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

Shestakov
1
,
Журавлев
2
,
Arykov
3
et al. 2010
2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices
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Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

Shestakov
1
,
Журавлев
2
,
Arykov
3
et al. 2010
2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices
0
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0
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Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)

Shestakov
1
,
Журавлев
2
,
Arykov
3
et al. 2010
2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologis (MNST)
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Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Shestakov
1
,
Журавлев
2
,
Arykov
3
et al. 2010
2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON)
1
0
2
0
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