In-plane c-axis oriented barium hexaferrite films prepared by magnetron sputtering

Meng, Siqin; Yue, Zhenxing; Li, Longtu

doi:10.1016/j.matlet.2012.07.023

Cited by 15 publications

(15 citation statements)

References 21 publications

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“…It is also seen that when the BaM films were deposited with oxygen in sputtering atmosphere, high hysteresis loop squareness ( M r / M s of more than 0.94) along in‐plane easy axis and low M r / M s (less than 0.05) along in‐plane hard axis were achieved with good repeatability. These results are comparable with those reported for films prepared by RF magnetron sputtering and our previous work …”

Section: Resultssupporting

confidence: 93%

“…In contrast, the film deposited without oxygen addition shows low

(h 0 \bar{h} 0)

peak intensities, suggesting very low levels of in‐plane orientation. In fact, this phenomenon has been observed elsewhere . In both cases, oxygen plays a key role in the formation of oriented BaM grains.…”

Section: Resultssupporting

confidence: 63%

“…An α‐Fe 2 O 3 secondary phase was also detected in these samples owing to its much lower crystallization temperature and higher thermodynamic stability than BaM . Previous studies have shown that the α‐Fe 2 O 3 phase plays a critical role in the orientation growth of the BaM films . In contrast, the film deposited without oxygen addition shows low

(h 0 \bar{h} 0)

peak intensities, suggesting very low levels of in‐plane orientation.…”

Section: Resultsmentioning

confidence: 85%

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Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Zhang

Yue

2015

J. Am. Ceram. Soc.

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In‐plane c‐axis oriented Ba‐hexaferrite (BaM) thin films were prepared on a‐plane (112¯0) sapphire (Al2O3) substrates using direct current (DC) magnetron sputtering followed by ex‐situ annealing. The sputtering atmosphere was found to have a great influence on the stoichiometry, orientation growth, and grain morphology of the as‐prepared BaM films. With moderate oxygen partial pressure during sputtering, in‐plane c‐axis highly oriented BaM films were obtained. The films showed strong magnetic anisotropy with a high hysteresis loop squareness (Mr/Ms of 0.96) along in‐plane easy axis and a low Mr/Ms of 0.05 along in‐plane hard axis. Rocking curves and pole figures were utilized to reveal the epitaxial‐like orientation relationship of the BaM films relative to the sapphire substrates, as well as the orientation growth dispersion of the hexagonal platelet‐shaped grains in BaM films.

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Section: Resultssupporting

confidence: 93%

“…In contrast, the film deposited without oxygen addition shows low

(h 0 \bar{h} 0)

Section: Resultssupporting

confidence: 63%

(h 0 \bar{h} 0)

peak intensities, suggesting very low levels of in‐plane orientation.…”

Section: Resultsmentioning

confidence: 85%

See 1 more Smart Citation

Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Zhang

Yue

2015

J. Am. Ceram. Soc.

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“…In addition, the in-plane c -axis aligned BaM films, only except the 45-nm-thick ones, have large remanent magnetization to saturation magnetization ( M r / M s ) ratio of larger than 0.85 along c -axis as shown in Table 1. This large ratio is comparable with the reported films prepared by radio frequency (RF) magnetron sputtering and pulsed laser deposition (PLD) techniques3445.…”

Section: Resultssupporting

confidence: 87%

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

Zhang

Meng

Song

et al. 2017

Sci Rep

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Barium hexaferrite (BaM) films with in-plane c-axis orientation are promising and technically important materials for self-biased magnetic microwave devices. In this work, highly oriented BaM films with different thickness and an in-plane easy axis (c-axis) of magnetization were grown on a-plane single-crystal sapphire substrates by direct current magnetron sputtering. A procedure involving seed layers, layer-by-layer annealing was adopted to reduce the substrate-induced strains and allow for the growth of thick (~3.44 μm) films. The epitaxial growth of the BaM film on sapphire was revealed by high-resolution transmission electron microscopy with dislocations being observed at the film-substrate interface. The orientation was also verified by X-ray diffraction and more notably, polarized Raman scattering. The magnetic properties and ferromagnetic resonant frequencies were experimentally characterized by a vibrating sample magnetometry and a frequency-swept ferromagnetic resonant flip-chip technique, respectively. The micron-thick BaM films exhibited a large remanence ratio of 0.92 along in-plane easy axis and a small one of 0.09 for the in-plane hard axis loop measurement. The FMR frequency was 50.3 GHz at zero field and reached 57.9 GHz under a magnetic field of 3 kOe, indicating that the epitaxial BaM films with strong self-biased behaviors have good electromagnetic properties in millimeter-wave range.

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“…A wide FWHM due to large α is enhanced by the non- oriented structure of this polycrystalline ferrite as an anisotropy dispersion. However, realization of an oriented soft magnetic hexaferrite items having the magnetically in-plane hard direction to improve wide FWHM may difficult because the c-axis of the hexaferrites as the magnetically hard axis orients easily to depthwise direction [43,44] without hard magnetic hexaferrites having the easy axis in c-axis [45]. However, CaF 2 -based nanogranular film has numerous advantages for packaged high-frequency applications compared with the ferrites.…”

Section: Comparing With Other Materialsmentioning

confidence: 99%

Ultra-high resistive and anisotropic CoPd–CaF2 nanogranular soft magnetic films prepared by tandem-sputtering deposition

Naoe

Kobayashi

Ohnuma

et al. 2015

Journal of Magnetism and Magnetic Materials

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In-plane c-axis oriented barium hexaferrite films prepared by magnetron sputtering

Cited by 15 publications

References 21 publications

Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering

Epitaxially grown BaM hexaferrite films having uniaxial axis in the film plane for self-biased devices

Ultra-high resistive and anisotropic CoPd–CaF2 nanogranular soft magnetic films prepared by tandem-sputtering deposition

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