In situ investigation on selenization kinetics of Cu–In precursor using time-resolved, high temperature X-ray diffraction

Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film

“…The results of the bilayer precursor studies showed direct routes to CIS formation without producing any intermediate phases as expressed by the reactions CuSe+InSe-CuInSe 2 [8], and CuSe+ 1 2 In 2 Se 3 -CuInSe 2 + 1 2 Se [9]. During the selenization of the Cu-In metal precursor, the formation of CuSe and its transformation to CuSe 2 , and then to CuInSe 2 were observed [10].…”

“…These combined studies [8][9][10][11] show that for CIS the pathway is dependent on the precursor structure. The results are also consistent with a one-dimensional diffusion-controlled reaction, and the detailed kinetic parameters depend on the precursor structure.…”

“…Katsui and Iwata [7] investigated the reaction pathway for CIS formation from glass/Cu/In/Se-stacked elemental layers by in situ hightemperature X-ray diffraction (XRD), suggesting the reaction path 2Cu+2In+4Se-Cu 2 Se+In 2 Se+2Se-2CuInSe 2 . Our group also used in situ high-temperature XRD to track the reaction pathway and determine the kinetics of a-CIS formation from two different bilayer precursors, InSe/CuSe [8] and In 2 Se 3 /CuSe [9], as well as selenization of a co-evaporated Cu and In metals [10]. The results of the bilayer precursor studies showed direct routes to CIS formation without producing any intermediate phases as expressed by the reactions CuSe+InSe-CuInSe 2 [8], and CuSe+ 1 2 In 2 Se 3 -CuInSe 2 + 1 2 Se [9].…”

CuInSe2 nano-crystallite reaction kinetics using solid state reaction from Cu2Se and In2Se3 powders

“…This leads to CIS powders prepared using the conventional solid state reaction unsuitable for application in wet processing to fabricate CIS thin film solar cells. To date, previous studies on the reaction mechanism and kinetics of CIS formation concentrated primarily on the bilayer In 2 Se 3 /CuSe precursor films [18][19][20][21]. Kim et al [18] investigated the reaction mechanism and kinetics of CIS formation from bilayer * Corresponding author.…”

Nucleation and growth kinetics of co-deposited copper and selenium precursors to form metastable copper selenides

“…Additionally, CuSe has been used as a precursor layer for the formation of copper indium diselenide from a selenized stacked elemental layer [37][38][39]. CuSe and orthorhombic CuSe 2 have been identified as impurity phases in copper indium diselenide grown by electrodeposition and vacuum deposition processes [40][41][42]. Binary copper-selenium compounds have been made by several methods including melt techniques [43][44][45], mechanical alloying [46], electrodeposition [47], plasma-assisted selenization [48], and at aqueous-organic interfaces [49].…”