In situ spectral reflectance analysis of the early stages of GaN thermal decomposition

Malek, W.; Bouzidi, M.; Chaaben, N.; Alshammari, Abdullah S.; Rebey, A.

doi:10.1016/j.ijleo.2022.169491

Cited by 2 publications

(2 citation statements)

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“…Afterward, a 0.7-μm thick-GaN template was deposited at 1080°C, followed by the growth of 0.4-μm thick AlGaN epilayer. The layer thicknesses of the GaN-template and AlGaN active layer were determined using in-situ reflectivity during the growth process 30 – 32 More detail on the growth process can be found in Refs.…”

Section: Methodsmentioning

confidence: 99%

“…The layer thicknesses of the GaN-template and AlGaN active layer were determined using in-situ reflectivity during the growth process. [30][31][32] More detail on the growth process can be found in Refs. 4, 29, 33, and 34. After growth, the AlGaN/GaN/sapphire sample, i.e., wafer, was divided into five pieces labeled as A 0 , A 1 , A 2 , A 3 , and A 4 .…”

Section: Methodsmentioning

confidence: 99%

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Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures

et al. 2022

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The size and density of nanopits, generated at the surface of their top layer, strongly affect the electrical and optical properties of AlGaN-based structures. Therefore, the control of the layer quality evolution as a function of the nanopits size/density is a crucial issue to enhance the device performance. In this paper, the effects of the nanopits diameter observed at the surface of AlGaN on carrier dynamics are systematically investigated. The variation of nanopits diameter is achieved through thermal annealing of a set of AlGaN/GaN heterostructures at different temperatures. The samples are characterized using the scanning electron microscope (SEM), energy-dispersive x-ray, high-resolution x-ray diffraction, photoluminescence (PL), and timeresolved PL spectroscopies. SEM images have revealed an increase in the nanopits diameter with increasing annealing temperature. In addition, we observed a linear development in the yellow luminescence intensity, accompanied by a deterioration in the PL decay times due to an increase in the density of point-defect complexes that act as nonradiative recombination centers. We also performed temperature-dependent PL measurements to study the impact of the nanopits diameter on electron-phonon scattering processes. Both electron-acoustic-and electron-longitudinal optical phonon interactions enhance with increasing nanopits diameter.

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