InAs deep quantum well structures and their application to Hall elements

Low-temperature transport properties in AlxGa1−xAsySb1−y/InAs quantum wells: Well-width dependence

“…By optimizing the MBE growth condition, the high mobility of electrons more than 2 Â 10 4 cm 2 /V s was achieved at room temperature. Such InAs QWs have been applied to the Hall element devices with high sensitivity and good reliability [3]. The low-field negative magnetoresistance (MR) below the transport magnetic field B tr ( ¼ _/4Det ¼ _/2el 2 , where D is the diffusion constant, t the elastic scattering time and l the mean free path) is caused by the suppression of weak localization (WL) of the individual carriers [4].…”

Persistent photoconductivity effect on weak localization in AlxGa1–xAsySb1–y/InAs quantum wells

“…A deep-donor defect in the barrier material is most likely for explaining a donor source for the electron accumulation in the QW, leading to a simple explanation for the PPC [1]. We developed the Al x Ga 1-x As y Sb 1-y /InAs QW with x = 0.6 and y = 0.1 which has a deep QW with the depth of 1.3 eV with high electron mobility, where the lattice mismatch between the QW and the barriers is less than 2% [4]. Recently, we have found both positive and negative PPC (PPPC and NPPC) in these QWs at low temperatures.…”

Magneto‐quantum transport in AlxGa1–xAsySb1–y/InAs quantum wells

“…Recently, we developed the InAs QWs confined by Al x Ga 1-x As y Sb 1-y barriers (x = 0.6, y = 0.1) which have a deep QW arising from a large conduction-band offset of ~1.3 eV with high electron mobility, where the lattice mismatch between the QW and the barriers is less than 2 %. Such InAs QWs have been applied to the Hall element devices with high sensitivity and good reliability [1].…”