Incoherent magnetization dynamics in strain mediated switching of magnetostrictive nanomagnets

Bhattacharya, Dhritiman; Al-Rashid, Mamun; D'Souza, Noel; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

doi:10.1088/0957-4484/28/1/015202

Cited by 15 publications

(9 citation statements)

References 37 publications

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Section: Introductionmentioning

confidence: 79%

“…coherency/incoherency of the switching process, its dependence on the nanomagnet dimension, and its influence on the switching reliability and energy dissipation. Stress induced magnetization switching has been shown to be incoherent [27], which motivates our study. In this study, elliptical disk nanomagnets of three different dimensions have been simulated while keeping the aspect ratio (ratio of major to minor axis to the thickness) constant.…”

Section: Introductionmentioning

confidence: 79%

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Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent Study

Al-Rashid¹,

Bandyopadhyay²,

Atulasimha³

2016

IEEE Trans. Electron Devices

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Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of thermal noise at room temperature. Occurrence of incoherent metastable states in the potential landscape of the nanomagnet can further exacerbate the error. Stochastic micromagnetic simulations at room temperature are used to understand and calculate energy dissipations and switching error probabilities in this important magnetization switching methodology. We find that these quantities have an intriguing dependence on nanomagnet size: small nanomagnets perform better owing to the fact that they are more resilient to the formation of metastable states and magnetization dynamics in them is more coherent. However, for a fixed stress anisotropy energy density, smaller nanomagnets will also have poorer resilience against thermal instability. Thus, the challenge in straintronics is to maximize the stress anisotropy energy density by developing materials and processes that yield the largest magnetostriction.

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Section: Introductionmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 79%

Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent Study

Al-Rashid¹,

Bandyopadhyay²,

Atulasimha³

2016

IEEE Trans. Electron Devices

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“…For the nanomagnet with the 60-90 nm width, the incoherent magnetization switching occurs when the thickness is 21 nm or more, and voltage-driven 90 • magnetization switching is achieved when the thickness is 9 −15 nm. At the same aspect ratio, the larger the thickness of nanomagnet, magnetization is the more prone to occur incoherent switching [40]. Therefore, we should choose the nanomagnet as thin as possible.…”

Section: Results and Discussion A Strain-induced Magnetization Switching:size-dependentmentioning

confidence: 99%

Proposal of Global Strain Clocking Scheme for Majority Logic Gate

et al. 2020

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A stairs-type global strain clocking mechanism for nanomagnetic majority logic gate based on shape engineering of nanomagnets was designed in this paper. Reasonable size nanomagnets and proper strain clocking scheme ensure the computing architecture pipelined at room temperature. The optimal global strain clocking scheme was obtained by investigating the impact of magnetic layer thickness and width on clocking period and strain magnitude. Encouragingly, for the global strain clocking, information transmission speed of majority logic gate is increased 1-2 times as against the local strain clocking scheme due to decreasing the number of start-ups during information transmission. While the energy dissipated per clock cycle of the global strain clocking scheme consumes 3-4 times less energy than that of local strain clocking scheme. Moreover, global clocking is used to control a nanomagnetic logic device(NMLD), in which case single device consisted of many nanomagnets can be treated as single nanomagnet. However, magnetization switching is error-prone in the presence of thermal noise at room temperature. Therefore, the proper structure parameters of the device are obtained at room temperature, in which case the error probability of the majority logic gate is 0.5% in theoretical simulation. These results provide essential guidance for the design of energyefficient multiferroic nanomagnetic logic devices.INDEX TERMS Energy-efficient, global strain clocking, nanomagnetic logic device (NMLD), shape engineering, spintronics.

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“…The procedure for incorporating stress and thermal noise in the simulations has been described in ref. [35] and will not be repeated here.…”

Section: Magneto-elastic Switching In a Nanomagnet With A Materials Dementioning

confidence: 99%

Magneto-elastic switching of magnetostrictive nanomagnets with in-plane anisotropy: the effect of material defects

Abeed

Atulasimha

Bandyopadhyay

2018

J. Phys.: Condens. Matter

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We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find that the error probability increases significantly in the presence of the defect, indicating that magneto-elastic switching is particularly vulnerable to material imperfections. Curiously, there is a critical stress value that gives the lowest error probability in both defect-free and defective nanomagnets. The critical stress is much higher in defective nanomagnets than in defect-free ones. Since it is more difficult to generate the critical stress in small nanomagnets than in large nanomagnets (having the same energy barrier for thermal stability), it would be a challenge to downscale magneto-elastically switched nanomagnets in memory and other applications where reliable switching is required. This is likely to be further exacerbated by the presence of defects.

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Incoherent magnetization dynamics in strain mediated switching of magnetostrictive nanomagnets

Cited by 15 publications

References 37 publications

Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent Study

Dynamic Error in Strain-Induced Magnetization Reversal of Nanomagnets Due to Incoherent Switching and Formation of Metastable States: A Size-Dependent Study

Proposal of Global Strain Clocking Scheme for Majority Logic Gate

Magneto-elastic switching of magnetostrictive nanomagnets with in-plane anisotropy: the effect of material defects

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